Abstract:
A manufacturing method of a thin film transistor array panel includes: simultaneously forming a gate conductor and a first electrode on a substrate, using a non-peroxide-based etchant; forming a gate insulating layer on the gate conductor and the first electrode; forming a semiconductor, a source electrode, and a drain electrode on the gate insulating layer; forming a passivation layer on the semiconductor, the source electrode, and the drain electrode; and forming a second electrode layer on the passivation layer.
Abstract:
A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.
Abstract:
A thin film transistor array panel includes a substrate, a gate line and a gate pad disposed on the substrate, a gate insulating layer disposed on the gate line and the gate pad, a data line and a data pad disposed on the gate insulating layer, an organic layer disposed on the data line and the data pad, and a connecting member disposed on one of the gate pad and the data pad, in which the organic layer includes a first portion overlapping the connecting member and a second portion not overlapping the connecting member, and a height of the first portion of the organic layer is greater than a height of the second portion of the organic layer.
Abstract:
Instead of forming contact holes the same way in both the non-image forming peripheral area (PA) and the image forming display area of a thin film transistor array panel, contact holes in the DA are formed to be substantially smaller than those in the PA for thereby improving an aperture ratio of the corresponding display device. In an exemplary embodiment, an inorganic gate insulating layer is not etched in the DA and only an inorganic first passivation layer among inorganic insulating layers positioned in the DA is etched to allow communication between the drain electrode and the corresponding field generating electrode. On the other hand, in the peripheral area, plural inorganic insulating layers such as the gate insulating laver, the first passivation laver, and the second passivation layer positioned on the gate wire and the data wire are simultaneously etched to form second contact holes and third contact holes exposing respective gate pads and data pads.
Abstract:
A display panel includes: a substrate including red, green, blue and white sub-pixel areas; red, green and blue color filter layers respectively in the red, green and blue sub-pixel areas; and a dummy color filter layer in the white sub-pixel area. The dummy color filter layer is adjacent to at least one of the red color filter layer, the green color filter layer, and the blue color filter layer, and the dummy color filter layer forms a step with the adjacent color filter layer.
Abstract:
An exemplary embodiment of the present inventive concept provides a display device including: a substrate; a semiconductor layer; a first inorganic insulating film disposed on the semiconductor layer and including a first opening; a first conductive film disposed on the first inorganic insulating film; a second inorganic insulating film disposed on the first inorganic insulating film to fill a concave portion on the first conductive film; a second conductive film disposed on the second inorganic insulating film; a third inorganic insulating film disposed on the second conductive film and including a second opening; and a third conductive film disposed on the third inorganic insulating film, and connected to the second conductive film, wherein the first opening and the second opening may overlap each other.
Abstract:
A photosensitive resin composition includes an acryl-based copolymer formed by copolymerizing unsaturated carboxylic acid, unsaturated carboxylic acid anhydride, or a mixture thereof and an olefin-based unsaturated compound or a mixture of olefin-based unsaturated compounds, a photoinitiator represented by the following Chemical Formula 1 or 2, a multifunctional acrylate oligomer, a multifunctional monomer having an ethylenically unsaturated bond, and a melamine crosslinking agent.
Abstract:
A display device according to an embodiment includes: a substrate; a transistor that is disposed on the substrate; a light emitting diode that is disposed on the substrate, and connected to the transistor; and a passivation layer that is disposed between the transistor and the light emitting diode, wherein a surface step of the passivation layer is within a range of and including 1 nm to 30 nm.
Abstract:
A thin film transistor (TFT) array panel and a manufacturing method thereof are disclosed. A contact hole may be formed to expose a pad disposed on a substrate of the TFT array panel. A first layer of a connecting member is formed with the same layer as a first field generating electrode and is disposed in the contact hole. A second passivation layer is disposed in the TFT array panel, but is removed at a region where the contact hole is formed and portions of the second passivation layer that cover the first layer of the connecting member. A second layer of the connecting member is formed on the first layer of the connecting member.
Abstract:
An organic light emitting diode (OLED) display includes a first substrate, a second substrate facing the first substrate, a sealing member interposed between the first substrate and the second substrate, the sealing member including a siloxane material, a semiconductor layer on the first substrate, a planarization layer on the semiconductor layer, and a barrier rib on the planarization layer. The planarization layer or the barrier rib may also include the siloxane material.