Abstract:
A radio frequency filter apparatus includes: radio frequency filters each having a first ring-type pattern extended from a respective first port and a second ring-type pattern extended from a respective second port; a cover ground layer disposed on or below the radio frequency filters and disposed to cover at least a portion of each of the radio frequency filters; and a surrounding ground layer disposed to surround at least a portion of each of the radio frequency filters along outer boundaries of the radio frequency filters, wherein the surrounding ground layer is spaced apart from radio frequency filters such that a shortest distance between the radio frequency filters and the surrounding ground layer is 8/5 or more times a shortest distance between the radio frequency filters and the cover ground layer.
Abstract:
A radio frequency filter includes a first conductive pattern; a second conductive pattern connected to a first point of the first conductive pattern and extended; a third conductive pattern connected to a second point of the first conductive pattern and extended to surround a portion of the second conductive pattern; a fourth conductive pattern; a fifth conductive pattern connected to a third point of the fourth conductive pattern and extended; and a sixth conductive pattern connected to a fourth point of the fourth conductive pattern and extended to surround a portion of the fifth conductive pattern. The first conductive pattern extends toward the fourth conductive pattern and the fourth conductive pattern extends toward the first conductive pattern. A distance between the first conductive pattern and the fourth conductive pattern is greater than or equal to a distance between the third conductive pattern and the sixth conductive pattern.
Abstract:
A power amplifying apparatus may include a first amplifying unit receiving power and amplifying a high frequency signal, a second amplifying unit receiving the power and amplifying the high frequency signal from the first amplifying unit, and a control unit controlling an operation of the first amplifying unit or the second amplifying unit. The first amplifying unit and the control unit are disposed on a complementary metal oxide semiconductor (CMOS) substrate, and the second amplifying unit is disposed on a GaAs substrate.
Abstract:
A power amplifier may include a first amplifying circuit configured to amplify an input RF signal; a second amplifying circuit connected to the first amplifying circuit in parallel configured to amplify the input RF signal; and a controller connected to at least one of the first amplifying circuit and the second amplifying circuit and configured to output a control signal in order to control an on-off state of at least one of the first amplifying circuit and the second amplifying circuit. Such an approach provides high efficiency without adding significant complexity to the power amplifier.
Abstract:
A switching circuit may include: the switching circuit includes a switching circuit unit including a first transistor and a second transistor connected to each other in series, the second transistor receiving a first control signal through a control terminal thereof, and an inverter connected between a control terminal of the first transistor and a first terminal of the first transistor. The inverter receives a second control signal and maintains a gate-source voltage level of the first transistor to a threshold voltage level of the first transistor or less, and levels of the first and second control signals are logically complementary to each other.
Abstract:
A power amplifier may include a first amplifying unit receiving a first bias signal to amplify a power level of an input signal; an envelope detecting unit detecting an envelope of the input signal; a comparing circuit unit comparing a peak value of the detected envelope with a preset reference voltage; and a second amplifying unit amplifying the power level of the input signal according to a second bias signal set depending on a comparison result of the comparing circuit unit.
Abstract:
A chip antenna is provided. The chip antenna includes a first dielectric layer; a second dielectric layer disposed on an upper surface of the first dielectric layer; a patch antenna pattern disposed in the second dielectric layer; first and second feed vias disposed to penetrate through at least one of the first and second dielectric layers, respectively and electrically connected to a corresponding feed point among different first and second feed points of the patch antenna pattern; and first and second filters disposed between the first and second dielectric layers, respectively and electrically connected to a corresponding feed via among the first and second feed vias.
Abstract:
There are provided an on-chip inductor, and a method for manufacturing the same. The on-chip inductor may include: a substrate; an oxide layer formed on the substrate; a spiral-shaped wiring layer formed on the oxide layer; and a shielding layer having a lattice shape interposed between the substrate and the wiring layer.
Abstract:
There are provided a motor driving device and method. The motor driving device includes: an operation controlling unit generating a pulse width modulation (PWM) signal for controlling an operation of a motor; a driving controlling unit generating a short pulse signal using the PWM signal transferred from the operation controlling unit; and a power supplying unit supplying power to the motor using the short pulse signal, wherein the driving controlling unit controls the PWM signal depending on a control signal provided from the outside to generate the short pulse signal.