摘要:
There is provided a front end module, including an amplification circuit unit amplifying signal, a multistage matching circuit unit connected to an output terminal of the amplification circuit unit, and a switch circuit unit connected to the multistage matching circuit unit, wherein the switch circuit unit includes a series switch circuit and a parallel switch circuit, the parallel switch circuit being connected to a node between a plurality of matching circuits included in the multistage matching circuit unit.
摘要:
A bias circuit providing different bias voltages depending on a power mode through a simple circuit, and a power amplifier having the same are provided. The bias circuit and the power amplifier include a bias setting unit configured to vary a voltage level of a control signal controlling a bias voltage according to an operation of a first transistor being switched-off in a high power mode and switched-on in a low power mode. A bias supplying unit includes a bias supplying transistor switched based on the control signal, to supply the bias voltage having a voltage level according to a switching operation of the bias supplying transistor.
摘要:
There are provided a bias circuit and an amplifier having a current limit function, including: a control voltage generating unit generating a control voltage using a reference voltage; a bias voltage generating unit generating a bias voltage according to the control voltage; and a bias current limit unit controlling the control voltage according to a bias current of the bias voltage generating unit.
摘要:
There is provided a radio frequency input circuit including a first direct current blocking unit provided between an input terminal and an input circuit unit and blocking a direct current voltage introduced through the input terminal, a first ESD protection circuit unit provided in parallel with the first direct current blocking unit and forming a bypass path according to an ESD voltage introduced through the input terminal, and a ground circuit unit provided between a first connection node between the first direct current blocking unit and the input circuit unit, and a ground, and forming a ground path according to the ESD voltage.
摘要:
The present invention relates to a power detection circuit and an RF signal amplification circuit having the same. According to an embodiment of the present invention, a power detection circuit including a coupling unit adjacent to an RF matching inductor to extract induced power; a rectification unit for rectifying the signal output from the coupling unit to output the rectified signal; a slope adjustment unit connected between an output terminal of the rectification unit and a ground and adjusting a voltage slope for power detection by changing the output signal of the output terminal of the rectification unit according to changes in internal impedance; and a smoothing unit for receiving the output signal of the output terminal of the rectification unit to smooth the received signal into a DC voltage for power detection using the voltage slope is provided. Further, an RF signal amplification circuit having the same is provided.
摘要:
There are provided a bias circuit and an amplifier controlling a bias voltage, the bias circuit and the amplifier including a control voltage generating unit generating a control voltage using a reference voltage, a bias voltage generating unit generating a bias voltage according to the control voltage, and a voltage drop unit dropping the bias voltage from the bias voltage generating unit to a base voltage so as to provide the base voltage to an amplifying unit, wherein the control voltage generating unit controls the control voltage according to an amplitude of a high-frequency signal input to the amplifying unit.
摘要:
There are provided a series inductor array implemented as a single winding capable of decreasing a layout area for providing a plurality of inductors, and a filter including the same, the series inductor array including a winding structure having both ends, and one or more terminal parts electrically connected to a region between the both ends of the winding structure to form an external electrical connection, wherein the winding structure has a structure in which a plurality of inductors having inductance formed in regions of the winding structure disposed between the both ends thereof and the terminal parts or between the terminal parts are connected in series.
摘要:
There is provided a radio frequency input circuit including a first direct current blocking unit provided between an input terminal and an input circuit unit and blocking a direct current voltage introduced through the input terminal, a first ESD protection circuit unit provided in parallel with the first direct current blocking unit and forming a bypass path according to an ESD voltage introduced through the input terminal, and a ground circuit unit provided between a first connection node between the first direct current blocking unit and the input circuit unit, and a ground, and forming a ground path according to the ESD voltage.
摘要:
There are provided a bias circuit and a power amplifier. The bias circuit includes a first temperature compensating unit connected between an operating voltage terminal and a ground and operating according to a reference voltage to generate a turn-on voltage, a second temperature compensating unit connected between a reference voltage terminal and the ground and operating according to the turn-on voltage to generate a control voltage, a power mode selecting unit selecting one of a high power mode and a low power mode and providing an additional current to the first temperature compensating unit at the time of selecting the low power mode to increase the turn-on voltage, and a bias voltage generating unit generating a bias voltage according to the control voltage, wherein the control voltage and the bias voltage are decreased according to the increase in the turn-on voltage.
摘要:
There is provided a power amplifier including a bias circuit unit generating a bias voltage of an amplifying unit, a voltage drop unit disposed between the bias circuit unit and the amplifying unit to drop the bias voltage to a base voltage, and a bypass circuit unit including an impedance element connected to the voltage drop unit in parallel and performing a switching operation according to a magnitude of an input signal.