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    SEMICONDUCTOR DEVICES HAVING AIR SPACER
    1.
    发明申请
    SEMICONDUCTOR DEVICES HAVING AIR SPACER 有权

    公开(公告)号：US20210210493A1

    公开(公告)日：2021-07-08

    申请号：US17028763

    申请日：2020-09-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jihee Kim ,  Yeongshin Park ,  Hyunchul Yoon ,  Joonghee Kim ,  Jungheun Hwang

    IPC: H01L27/108

    Abstract: A semiconductor device includes bit line structures disposed on a substrate, each bit line structure comprising a bit line and an insulating spacer structure, buried contacts which fill lower portions of spaces between bit line structures in the substrate, and landing pads which fill upper portions of the spaces, extend from upper surfaces of the buried contacts to upper surfaces of the bit line structures, and are spaced apart from each other by insulating structures. A first insulating structure is disposed between a first landing pad and a first bit line structure. The first insulating structure includes a sidewall extending along a sidewall of the first landing pad toward the substrate. In a direction extending toward the substrate, the sidewall of the first insulating structure gets closer to a first sidewall of the first bit line structure.

    Method of manufacturing integrated circuit device
    2.
    发明授权
    Method of manufacturing integrated circuit device 有权

    公开(公告)号：US11380552B2

    公开(公告)日：2022-07-05

    申请号：US16858591

    申请日：2020-04-25

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyunchul Yoon ,  Mincheol Kwak ,  Joonghee Kim ,  Jihee Kim ,  Yeongshin Park ,  Jungheun Hwang

    IPC: H01L21/308 ,  H01L27/108

    Abstract: In order to manufacture an integrated circuit device, a feature layer is formed on a substrate in a first area for forming a plurality of chips and in a second area surrounding the first area. The feature layer has a step difference in the second area. On the feature layer, a hard mask structure including a plurality of hard mask layers stacked on each other is formed. In the first area and the second area, a protective layer covering the hard mask structure is formed. On the protective layer, a photoresist layer is formed. A photoresist pattern is formed by exposing and developing the photoresist layer in the first area by using the step difference in the second area as an alignment key.

    Semiconductor devices having air spacer
    7.
    发明授权
    Semiconductor devices having air spacer 有权

    公开(公告)号：US12238920B2

    公开(公告)日：2025-02-25

    申请号：US17971256

    申请日：2022-10-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jihee Kim ,  Yeongshin Park ,  Hyunchul Yoon ,  Joonghee Kim ,  Jungheun Hwang

    IPC: H10B12/00 ,  H01L21/764 ,  H01L21/768 ,  H01L29/66

    Abstract: A semiconductor device includes bit line structures disposed on a substrate, each bit line structure comprising a bit line and an insulating spacer structure, buried contacts which fill lower portions of spaces between bit line structures in the substrate, and landing pads which fill upper portions of the spaces, extend from upper surfaces of the buried contacts to upper surfaces of the bit line structures, and are spaced apart from each other by insulating structures. A first insulating structure is disposed between a first landing pad and a first bit line structure. The first insulating structure includes a sidewall extending along a sidewall of the first landing pad toward the substrate. In a direction extending toward the substrate, the sidewall of the first insulating structure gets closer to a first sidewall of the first bit line structure.

    Method of fabricating semiconductor device using multipe photolithography for patterning
    8.
    发明授权
    Method of fabricating semiconductor device using multipe photolithography for patterning 有权

    公开(公告)号：US11610898B2

    公开(公告)日：2023-03-21

    申请号：US17237208

    申请日：2021-04-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Hyun-Chul Yoon ,  Sungun Kwon ,  Hanseung Kwak ,  Jihee Kim ,  Sunghoon Choi

    IPC: H01L27/108

    Abstract: Disclosed are semiconductor devices and their fabrication methods. The method includes forming an etching target on a substrate including cell and key regions, forming lower and upper mask layers on the etching target, performing photolithography to form an upper mask pattern including a hole on the cell region, a preliminary key pattern on the key region, a bar pattern on the key region, and a trench between the preliminary key pattern and the bar pattern, forming pillar and dam patterns filling the hole and the trench, performing photolithography to remove the upper mask pattern except for the bar pattern, using the pillar pattern, the dam pattern, and the bar pattern as an etching mask to form a lower mask pattern, and using the lower mask pattern as an etching mask to form an etching target pattern on the cell region and a key pattern on the key region.

    SEMICONDUCTOR DEVICES HAVING AIR SPACER
    9.
    发明申请
    SEMICONDUCTOR DEVICES HAVING AIR SPACER 有权

    公开(公告)号：US20230037972A1

    公开(公告)日：2023-02-09

    申请号：US17971256

    申请日：2022-10-21

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jihee Kim ,  Yeongshin Park ,  Hyunchul Yoon ,  Joonghee Kim ,  Jungheun Hwang

    IPC: H01L27/108 ,  H01L21/768 ,  H01L29/66 ,  H01L21/764

    Abstract: A semiconductor device includes bit line structures disposed on a substrate, each bit line structure comprising a bit line and an insulating spacer structure, buried contacts which fill lower portions of spaces between bit line structures in the substrate, and landing pads which fill upper portions of the spaces, extend from upper surfaces of the buried contacts to upper surfaces of the bit line structures, and are spaced apart from each other by insulating structures. A first insulating structure is disposed between a first landing pad and a first bit line structure. The first insulating structure includes a sidewall extending along a sidewall of the first landing pad toward the substrate. In a direction extending toward the substrate, the sidewall of the first insulating structure gets closer to a first sidewall of the first bit line structure.

    Semiconductor devices having air spacer
    10.
    发明授权
    Semiconductor devices having air spacer 有权

    公开(公告)号：US11508732B2

    公开(公告)日：2022-11-22

    申请号：US17028763

    申请日：2020-09-22

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Jihee Kim ,  Yeongshin Park ,  Hyunchul Yoon ,  Joonghee Kim ,  Jungheun Hwang

    IPC: H01L27/108 ,  H01L21/768 ,  H01L29/66 ,  H01L21/764

    Abstract: A semiconductor device includes bit line structures disposed on a substrate, each bit line structure comprising a bit line and an insulating spacer structure, buried contacts which fill lower portions of spaces between bit line structures in the substrate, and landing pads which fill upper portions of the spaces, extend from upper surfaces of the buried contacts to upper surfaces of the bit line structures, and are spaced apart from each other by insulating structures. A first insulating structure is disposed between a first landing pad and a first bit line structure. The first insulating structure includes a sidewall extending along a sidewall of the first landing pad toward the substrate. In a direction extending toward the substrate, the sidewall of the first insulating structure gets closer to a first sidewall of the first bit line structure.

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