公开(公告)号：US09223656B2

公开(公告)日：2015-12-29

申请号：US13960826

申请日：2013-08-07

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Bogeun Kim

IPC: G06F11/00 ,  G06F11/14 ,  G11C11/56 ,  G11C16/34 ,  G11C16/00 ,  G11C29/02 ,  G11C29/04

CPC classification number: G06F11/1402 ,  G11C11/5642 ,  G11C16/00 ,  G11C16/3404 ,  G11C29/021 ,  G11C29/028 ,  G11C2029/0409

Abstract: An operating method for a memory system including a nonvolatile random access memory (NVRAM) and a NAND flash memory includes performing a normal read operation directed to the target memory cell in response to a read request, determining that a read fail has occurred as a result of the normal read operation, then performing a read retry operation by iterations directed to the target memory cell according to a first read retry scheme until a pass read retry iteration successfully reads the target memory cell, and storing pass information associated with the pass read retry iteration in the NVRAM.

Abstract translation: 包括非易失性随机存取存储器（NVRAM）和NAND闪速存储器的存储器系统的操作方法包括响应于读取请求执行指向目标存储器单元的正常读取操作，确定已经发生读取失败 的正常读取操作，然后根据第一读取重试方案通过针对目标存储器单元的迭代执行读取重试操作，直到通过读取重试迭代成功读取目标存储器单元，并且存储与通过读取重试相关联的通过信息 NVRAM中的迭代。

公开(公告)号：US20230298908A1

公开(公告)日：2023-09-21

申请号：US18114235

申请日：2023-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Daewoo Hwangbo ,  Bogeun Kim ,  Kyungnam Kang ,  Changhoon Kwak ,  Youngju Ro ,  Joonghoon Lee

IPC: H01L21/67

CPC classification number: H01L21/67017 ,  H01L21/67248 ,  F16L59/065

Abstract: A heating jacket wrapping a pipe of semiconductor manufacturing equipment includes an internal shell wrapping an outer circumference of the pipe and having an insulation function, a heating line arranged on the outside of an internal shell, a vacuum insulation panel (VIP) wrapping the outside of the heating line, and an external shell wrapping an external surface of the VIP and having an insulation function. A plurality of heating jackets are connected to one another in a longitudinal direction of the pipe. Temperature sensors are arranged in some of the plurality of heating jackets. Temperature sensors are not arranged in the others of the plurality of heating jackets.

公开(公告)号：US09064582B2

公开(公告)日：2015-06-23

申请号：US14316023

申请日：2014-06-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Youngsun Song ,  Bogeun Kim ,  Ohsuk Kwon ,  Kitae Park ,  Seung-Hwan Shin ,  Sangyong Yoon

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  G11C11/56 ,  G11C16/08

CPC classification number: G11C16/10 ,  G11C11/5621 ,  G11C11/5628 ,  G11C11/5642 ,  G11C16/08 ,  G11C16/34 ,  G11C16/3459

Abstract: A nonvolatile memory device includes a memory cell array, a page buffer unit which output a verify-read result, a reference current generating unit which generates a reference current signal, a page buffer decoding unit which outputs currents according to the verify-read result. The nonvolatile memory device further includes an analog bit counting unit which counts the currents, a digital adding unit which calculates an accumulated sum of the counting result, a pass/fail checking unit which outputs a pass signal or fail signal according to the calculation result, and a control unit controlling a program operation.

Abstract translation: 非易失性存储器件包括存储单元阵列，输出验证读取结果的页面缓冲器单元，产生参考电流信号的参考电流产生单元，根据验证读取结果输出电流的页面缓冲器解码单元。 非易失性存储装置还包括对电流进行计数的模拟比特计数单元，计算计数结果的累积和的数字加法单元，根据计算结果输出通过信号或失败信号的通过/失败检查单元， 以及控制程序操作的控制单元。