公开(公告)号：US11355195B2

公开(公告)日：2022-06-07

申请号：US17220107

申请日：2021-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo Shim ,  Ji-ho Cho ,  Yong-seok Kim ,  Byoung-taek Kim ,  Sun-gyung Hwang

IPC: G11C16/04 ,  G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/08 ,  G11C11/56 ,  G06F3/06 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US12125538B2

公开(公告)日：2024-10-22

申请号：US17834024

申请日：2022-06-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo Shim ,  Ji-ho Cho ,  Yong-seok Kim ,  Byoung-taek Kim ,  Sun-gyung Hwang

IPC: G11C16/10 ,  G11C11/56 ,  G11C16/04 ,  G11C16/08 ,  G11C16/34 ,  H01L29/788 ,  G06F3/06 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/3427 ,  G11C16/3459 ,  H01L29/7885 ,  G06F3/0679 ,  H10B41/35 ,  H10B43/27 ,  H10B43/35

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US10971232B2

公开(公告)日：2021-04-06

申请号：US16553891

申请日：2019-08-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo Shim ,  Ji-ho Cho ,  Yong-seok Kim ,  Byoung-taek Kim ,  Sun-gyung Hwang

IPC: G11C16/04 ,  G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/08 ,  G11C11/56 ,  G06F3/06 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.

公开(公告)号：US10424381B2

公开(公告)日：2019-09-24

申请号：US15870989

申请日：2018-01-14

Applicant: Samsung Electronics Co., Ltd.

Inventor： Won-bo Shim ,  Ji-ho Cho ,  Yong-seok Kim ,  Byoung-taek Kim ,  Sun-gyung Hwang

IPC: G11C16/04 ,  G11C16/10 ,  H01L29/788 ,  G11C16/34 ,  G11C16/08 ,  G11C11/56 ,  G06F3/06 ,  H01L27/11524 ,  H01L27/1157 ,  H01L27/11582

Abstract: A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.