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公开(公告)号：US10424381B2
公开(公告)日：2019-09-24
申请号：US15870989
申请日：2018-01-14
发明人： Won-bo Shim , Ji-ho Cho , Yong-seok Kim , Byoung-taek Kim , Sun-gyung Hwang
IPC分类号： G11C16/04 , G11C16/10 , H01L29/788 , G11C16/34 , G11C16/08 , G11C11/56 , G06F3/06 , H01L27/11524 , H01L27/1157 , H01L27/11582
摘要： A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.
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公开(公告)号：US11355195B2
公开(公告)日：2022-06-07
申请号：US17220107
申请日：2021-04-01
发明人： Won-bo Shim , Ji-ho Cho , Yong-seok Kim , Byoung-taek Kim , Sun-gyung Hwang
IPC分类号： G11C16/04 , G11C16/10 , H01L29/788 , G11C16/34 , G11C16/08 , G11C11/56 , G06F3/06 , H01L27/11524 , H01L27/1157 , H01L27/11582
摘要： A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.
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公开(公告)号：US12125538B2
公开(公告)日：2024-10-22
申请号：US17834024
申请日：2022-06-07
发明人： Won-bo Shim , Ji-ho Cho , Yong-seok Kim , Byoung-taek Kim , Sun-gyung Hwang
IPC分类号： G11C16/10 , G11C11/56 , G11C16/04 , G11C16/08 , G11C16/34 , H01L29/788 , G06F3/06 , H10B41/35 , H10B43/27 , H10B43/35
CPC分类号： G11C16/10 , G11C11/5628 , G11C16/0483 , G11C16/08 , G11C16/3427 , G11C16/3459 , H01L29/7885 , G06F3/0679 , H10B41/35 , H10B43/27 , H10B43/35
摘要： A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.
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公开(公告)号：US10971232B2
公开(公告)日：2021-04-06
申请号：US16553891
申请日：2019-08-28
发明人： Won-bo Shim , Ji-ho Cho , Yong-seok Kim , Byoung-taek Kim , Sun-gyung Hwang
IPC分类号： G11C16/04 , G11C16/10 , H01L29/788 , G11C16/34 , G11C16/08 , G11C11/56 , G06F3/06 , H01L27/11524 , H01L27/1157 , H01L27/11582
摘要： A program method of a nonvolatile memory device that performs a plurality of program loops is provided. At least one of the plurality of program loops includes dividing a channel of a selected cell string into a first side channel and a second side channel during a first interval and a second interval, turning off a string selection transistor of the selected cell string by applying a string select line voltage of a first level during the first interval, and boosting a first voltage of the first side channel and a second voltage of the second side channel, and turning on the string selection transistor by applying the string select line voltage of a second level different from the first level during the second interval, and performing a hot carrier injection (HCI) program operation on a selected memory cell corresponding to the first side channel or the second side channel.
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