RETICLE INSPECTION APPARATUS AND METHOD
    1.
    发明申请
    RETICLE INSPECTION APPARATUS AND METHOD 审中-公开
    检验检测装置及方法

    公开(公告)号:US20160078608A1

    公开(公告)日:2016-03-17

    申请号:US14692128

    申请日:2015-04-21

    CPC classification number: G06T7/001 G06T2207/30148

    Abstract: A reticle inspection apparatus includes a reticle, an image generator to generate images of a surface of the reticle, and an image processor to compare first and second images generated by the image generator. The first image is generated when a pellicle is not on the reticle and the second image is generated when the pellicle is on the reticle.

    Abstract translation: 标线检查装置包括掩模版,图像发生器,用于生成掩模版的表面的图像;以及图像处理器,用于比较由图像发生器产生的第一和第二图像。 当防护薄膜组件不在掩模版上时产生第一图像,并且当防护薄膜组件在掩模版上时产生第二图像。

    CHEMICAL SUPPLY STRUCTURE AND A DEVELOPING APPARATUS HAVING THE SAME

    公开(公告)号:US20200150539A1

    公开(公告)日:2020-05-14

    申请号:US16445969

    申请日:2019-06-19

    Abstract: A chemical supply structure includes a bar-shaped body having a plurality of chemical reservoirs in which a plurality of chemicals is individually stored such that the body partially crosses an underlying substrate, a bar-shaped nozzle protruded from a bottom surface of the body and injecting injection chemicals onto the substrate, a plurality of the chemicals being mixed into the injection chemicals, and a hydrophobic unit arranged on the bottom surface of the body and on a side surface of the nozzle such that a mixed solution mixed with the injection chemicals is prevented from adhering to the bottom surface and the side surface by controlling a contact angle of the mixed solution with respect to the bottom surface and the side surface.

    METHOD FOR GROUPING REGION OF INTEREST OF MASK PATTERN AND MEASURING CRITICAL DIMENSION OF MASK PATTERN USING THE SAME
    8.
    发明申请
    METHOD FOR GROUPING REGION OF INTEREST OF MASK PATTERN AND MEASURING CRITICAL DIMENSION OF MASK PATTERN USING THE SAME 有权
    用于分类掩模区域的方法和使用其掩蔽图案的尺寸关键尺寸

    公开(公告)号:US20160077517A1

    公开(公告)日:2016-03-17

    申请号:US14710872

    申请日:2015-05-13

    Abstract: A method for measuring a critical dimension of a mask pattern, including generating a mask pattern using an optically proximity-corrected (OPC) mask design including at least one block; measuring a first critical dimension of a target-region of interest (target-ROI) including neighboring blocks having a same critical dimension (CD), in the mask pattern; determining a group region of interest including the target-ROI and at least one neighboring block adjacent to the target-ROI; measuring second CDs of the neighboring blocks of the group region of interest; and correcting a measuring value of the first CD using a measuring value of the second CDs.

    Abstract translation: 一种用于测量掩模图案的临界尺寸的方法,包括使用包括至少一个块的光学邻近校正(OPC)掩模设计来生成掩模图案; 在掩模图案中测量包括具有相同临界尺寸(CD)的相邻块的感兴趣目标区域(目标 - ROI)的第一临界尺度; 确定包括所述目标ROI的关注组群以及与所述目标ROI相邻的至少一个相邻块; 测量感兴趣的组区域的相邻块的第二CD; 以及使用所述第二CD的测量值来校正所述第一CD的测量值。

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