公开(公告)号：US20200066499A1

公开(公告)日：2020-02-27

申请号：US16395532

申请日：2019-04-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kyeong-Hun KIM ,  Jeong-Il MUN ,  Hyung-Joo LEE ,  Jong-Woo SUN ,  Dong-Kyu KIM

IPC: H01J37/32 ,  G01N21/68 ,  G01J3/443 ,  G01J3/02

Abstract: Provided is a plasma monitoring apparatus including an objective lens configured to collect light that is emitted from plasma and passes through an optical window of a chamber, a beam splitter configured to divide the light collected by the objective lens into first light and second light, a first optical system and a second optical system that are provided on a first optical path of the first light and a second optical path of the second light, respectively, the first optical system and the second optical system having different focal lengths such that focal points of the first optical system and the second optical system are set at different regions in the plasma, and a light detector configured to detect the first light that has passed through the first optical system and the second light that has passed through the second optical system.

公开(公告)号：US20190301937A1

公开(公告)日：2019-10-03

申请号：US16238644

申请日：2019-01-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeong-Il MUN ,  Hyung-Joo LEE ,  Jong-Woo SUN ,  Ja-Myung GU ,  Jae-Woong HWANG ,  Jong-Hwan AN

IPC: G01J3/443 ,  G01N21/73

Abstract: A calibrator of an OES may include a cover, a reference light source and a controller. The cover may be detachably combined with a ceiling of a plasma chamber of a plasma processing apparatus. The reference light source may be installed at the cover to irradiate a reference light to the OES through an inner space of the plasma chamber. The controller may compare a spectrum of the reference light inputted into the OES with a spectrum of an actual light inputted into the OES during a plasma process in the plasma chamber to calibrate the OES. Thus, the OES may be calibrated without disassembling of the OES from the plasma chamber to decrease a time for calibrating the OES.

公开(公告)号：US20170032987A1

公开(公告)日：2017-02-02

申请号：US15096555

申请日：2016-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyung-Joo LEE ,  Kwang-Nam KIM ,  Jong-Seo HONG ,  Kye-Hyun BAEK ,  Masayuki TOMOYASU

IPC: H01L21/67 ,  H01J37/32 ,  H01L21/683

CPC classification number: H01J37/32642 ,  H01J37/32009 ,  H01J2237/334 ,  H01L21/6831 ,  H01L21/68735

Abstract: Disclosed are a dry etching apparatus and a method of etching a substrate using the same. The apparatus includes a base at a lower portion of process chamber in which a dry etching process is performed, a substrate holder arranged on the base and holding a substrate on which a plurality of pattern structures is formed by the etching process, a focus ring enclosing the substrate holder and uniformly focusing an etching plasma to a sheath area over the substrate, a driver driving the focus ring in a vertical direction perpendicular to the base and a position controller controlling a vertical position of the focus ring by selectively driving the driver in accordance with inspection results of the pattern structures. Accordingly, the gap distance between the substrate and the focus ring is automatically controlled to thereby increase the uniformity of the etching plasma over the substrate.

Abstract translation: 公开了一种干式蚀刻装置和使用其进行蚀刻的基板的方法。 该设备包括在处理室的下部处的基座，其中执行干法蚀刻工艺;衬底保持器，其布置在基底上并保持通过蚀刻工艺在其上形成多个图案结构的衬底;聚焦环封闭 衬底保持器并且均匀地将蚀刻等离子体聚焦到衬底上的护套区域上，驱动聚焦环的垂直方向与基座垂直的驱动器以及控制聚焦环的垂直位置的位置控制器通过根据 具有图案结构的检查结果。 因此，自动控制基板与聚焦环之间的间隙距离，从而增加蚀刻等离子体在基板上的均匀性。

公开(公告)号：US20160077517A1

公开(公告)日：2016-03-17

申请号：US14710872

申请日：2015-05-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyung-Joo LEE ,  Won-Joo PARK ,  Seuk-Hwan CHOI ,  Byung-Gook KIM ,  Dong-Hoon CHUNG

IPC: G05B19/4097 ,  G06T7/00

CPC classification number: G06T7/0004 ,  G05B2219/45027 ,  G06T2207/10061 ,  G06T2207/30148

Abstract: A method for measuring a critical dimension of a mask pattern, including generating a mask pattern using an optically proximity-corrected (OPC) mask design including at least one block; measuring a first critical dimension of a target-region of interest (target-ROI) including neighboring blocks having a same critical dimension (CD), in the mask pattern; determining a group region of interest including the target-ROI and at least one neighboring block adjacent to the target-ROI; measuring second CDs of the neighboring blocks of the group region of interest; and correcting a measuring value of the first CD using a measuring value of the second CDs.

Abstract translation: 一种用于测量掩模图案的临界尺寸的方法，包括使用包括至少一个块的光学邻近校正（OPC）掩模设计来生成掩模图案; 在掩模图案中测量包括具有相同临界尺寸（CD）的相邻块的感兴趣目标区域（目标 - ROI）的第一临界尺度; 确定包括所述目标ROI的关注组群以及与所述目标ROI相邻的至少一个相邻块; 测量感兴趣的组区域的相邻块的第二CD; 以及使用所述第二CD的测量值来校正所述第一CD的测量值。