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    SPIKING NEURAL NETWORK DEVICE, NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD THEREOF
    3.
    发明公开
    SPIKING NEURAL NETWORK DEVICE, NONVOLATILE MEMORY DEVICE, AND OPERATION METHOD THEREOF 审中-公开

    公开(公告)号：US20230215498A1

    公开(公告)日：2023-07-06

    申请号：US17959356

    申请日：2022-10-04

    申请人： Samsung Electronics Co., Ltd.

    发明人： SEUNGHWAN SONG ,  Byung-Gook Park ,  Bosung Jeon

    IPC分类号： G11C16/04 ,  G11C16/08 ,  G11C16/24

    CPC分类号： G11C16/0433 ,  G11C16/08 ,  G11C16/24

    摘要： A spiking neural network device comprises at least one NAND cell string including a first NAND cell string that includes a string select transistor and a plurality of nonvolatile memory cells between a bit line and a ground select line, a string control circuit configured to generate a string selection signal to turn on the string select transistor in response to an input spike, a word line decoder configured to generate a word line selection signal for selecting a word line of a plurality of word lines for each of the plurality of nonvolatile memory cells in response to the input spike, a plurality of sensing circuits connected to the bit line, respectively corresponding to the plurality of word lines, each sensing circuit configured to generate an output spike according to a current transmitted through the bit line when a corresponding word line is selected, a plurality of switch transistors, each configured to connect one of the plurality of sensing circuits to the bit line according to a switch selection signal, and a switch decoder configured to generate a switch selection signal in synchronization with the word line selection signal for a selected word line.

    Semiconductor devices having vertical device and non-vertical device and methods of forming the same
    5.
    发明授权
    Semiconductor devices having vertical device and non-vertical device and methods of forming the same 有权
    具有垂直装置和非垂直装置的半导体装置及其形成方法

    公开(公告)号：US09461054B2

    公开(公告)日：2016-10-04

    申请号：US14789433

    申请日：2015-07-01

    申请人： Samsung Electronics Co., Ltd.

    发明人： Min-Chul Sun ,  Byung-Gook Park

    IPC分类号： H01L27/11 ,  H01L21/8234 ,  H01L21/8238 ,  H01L27/092 ,  H01L29/78

    CPC分类号： H01L27/1104 ,  H01L21/823487 ,  H01L21/823885 ,  H01L27/092 ,  H01L29/7827

    摘要： A semiconductor device comprises a substrate extending in a horizontal direction and a vertical transistor on the substrate. The vertical transistor comprises: a first diffusion region on the substrate; a channel region on the first diffusion region and extending in a vertical direction relative to the horizontal direction of the extension of the substrate; a second diffusion region on the channel region; and a gate electrode at a sidewall of, and insulated from, the channel region. A horizontal transistor is positioned on the substrate, the horizontal transistor comprising: a first diffusion region and a second diffusion region on the substrate and spaced apart from each other; a channel region on the substrate between the first diffusion region and the second diffusion region; and a gate electrode on the channel region and isolated from the channel region. A portion of a gate electrode of the vertical transistor and a portion of the gate electrode of the horizontal transistor are at a same vertical position in the vertical direction relative to the substrate.

    摘要翻译： 半导体器件包括在水平方向上延伸的衬底和在衬底上的垂直晶体管。 所述垂直晶体管包括：所述基板上的第一扩散区域; 在所述第一扩散区域上的相对于所述基板的延伸部的水平方向在垂直方向上延伸的沟道区域; 沟道区上的第二扩散区; 以及在沟道区的侧壁处和绝缘的栅电极。 水平晶体管位于衬底上，水平晶体管包括：在衬底上的第一扩散区和第二扩散区，彼此间隔开; 在所述第一扩散区域和所述第二扩散区域之间的衬底上的沟道区域; 以及沟道区上的栅极，并与沟道区分离。 垂直晶体管的栅电极的一部分和水平晶体管的栅电极的一部分在垂直方向上相对于衬底处于相同的垂直位置。