公开(公告)号：US20190265291A1

公开(公告)日：2019-08-29

申请号：US16151826

申请日：2018-10-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-Sik Kwon ,  Jin Duck Park ,  Jin Wook Jang ,  Ji-Yeon Han

IPC: G01R31/11 ,  H01L23/58 ,  H01L23/528 ,  H01L23/00

Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.

公开(公告)号：US10788528B2

公开(公告)日：2020-09-29

申请号：US16151826

申请日：2018-10-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan-Sik Kwon ,  Jin Duck Park ,  Jin Wook Jang ,  Ji-Yeon Han

IPC: G01R31/11 ,  H01L23/58 ,  H01L23/00 ,  H01L23/528

Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.

公开(公告)号：US11740276B2

公开(公告)日：2023-08-29

申请号：US17019936

申请日：2020-09-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Chan-Sik Kwon ,  Jin Duck Park ,  Jin Wook Jang ,  Ji-Yeon Han

IPC: G01R31/11 ,  H01L23/58 ,  H01L23/00 ,  H01L23/528

CPC classification number: G01R31/11 ,  H01L23/528 ,  H01L23/562 ,  H01L23/585 ,  H01L24/06 ,  H01L2224/06131

Abstract: A crack detection chip includes a chip which includes an internal region and an external region surrounding the internal region, a guard ring formed inside the chip along an edge of the chip to define the internal region and the external region, an edge wiring disposed along an edge of the internal region in the form of a closed curve and a pad which is exposed on a surface of the chip and is connected to the edge wiring. The edge wiring is connected to a Time Domain Reflectometry (TDR) module which applies an incident wave to the edge wiring through the pad, and detects a reflected wave formed in the edge wiring to detect a position of a crack.

公开(公告)号：US09255959B2

公开(公告)日：2016-02-09

申请号：US13961201

申请日：2013-08-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chan-Sik Kwon ,  Seok-Won Jeong ,  Jae-Ho Choi ,  Jun-Young Ko

IPC: G01N23/04 ,  G01R31/26 ,  G01R31/28 ,  G01R31/308

CPC classification number: G01R31/2607 ,  G01N23/04 ,  G01R31/2896 ,  G01R31/308

Abstract: A test apparatus for a semiconductor package comprising an X-ray analyzer acquiring an X-ray image of the semiconductor package and detecting a thickness of the semiconductor package from the X-ray image, and a thermal reaction analyzer applying a voltage to the semiconductor package and detecting a failure position of the semiconductor package using a surface temperature of the semiconductor package and the thickness of the semiconductor package may be provided.

Abstract translation: 一种半导体封装的测试装置，包括：X射线分析仪，获取半导体封装的X射线图像，并从X射线图像检测半导体封装的厚度，以及向半导体封装施加电压的热反应分析器 并且可以提供使用半导体封装的表面温度和半导体封装的厚度来检测半导体封装的故障位置。