公开(公告)号：US11233118B2

公开(公告)日：2022-01-25

申请号：US16400475

申请日：2019-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Lim Park ,  Sun-Min Moon ,  Chang-Hwa Jung ,  Young-Geun Park ,  Jong-Bom Seo ,  Kyu-Ho Cho

IPC: H01L49/02 ,  C23C16/455

Abstract: An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.

公开(公告)号：US20150091133A1

公开(公告)日：2015-04-02

申请号：US14315770

申请日：2014-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Ho Cho ,  Hyun-Jeong Yang ,  Se-Hoon Oh ,  Yong-Jae Lee ,  Ki-Vin IM ,  Jae-Soon Lim ,  Han-Jin Lim ,  Jae-Wan Chang ,  Chang-Hwa Jung

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L27/10855 ,  H01L28/65 ,  H01L28/91

Abstract: In a semiconductor device and in methods of formation thereof, a semiconductor device comprises a substrate, a lower electrode on the substrate, and a dielectric layer on the lower electrode. An adhesion layer is positioned on the dielectric layer and an upper electrode is positioned on the adhesion layer. The adhesion layer contacts the dielectric layer and the upper electrode, and comprises a conductive material.

Abstract translation: 在半导体器件及其形成方法中，半导体器件包括衬底，衬底上的下电极和下电极上的电介质层。 粘合层位于介电层上，上电极位于粘合层上。 粘合层接触电介质层和上电极，并且包括导电材料。