公开(公告)号：US11705483B2

公开(公告)日：2023-07-18

申请号：US17366115

申请日：2021-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Sun Kim ,  Sang-Yeol Kang ,  Kyoo-Ho Jung ,  Kyu-Ho Cho ,  Hyo-Sik Mun

IPC: H01L27/108 ,  H01G4/10 ,  H01L49/02 ,  H01G4/008 ,  H10B12/00

CPC classification number: H01L28/75 ,  H01G4/008 ,  H01G4/10 ,  H10B12/315

Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.

公开(公告)号：US11233118B2

公开(公告)日：2022-01-25

申请号：US16400475

申请日：2019-05-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Young-Lim Park ,  Sun-Min Moon ,  Chang-Hwa Jung ,  Young-Geun Park ,  Jong-Bom Seo ,  Kyu-Ho Cho

IPC: H01L49/02 ,  C23C16/455

Abstract: An integrated circuit (IC) device includes an electrode, a dielectric layer facing the electrode, and a plurality of interface layers interposed between the electrode and the dielectric layer and including a first metal. The plurality of interface layers includes a first interface layer and a second interface layer. An oxygen content of the first interface layer is different from an oxygen content of the second interface layer.

公开(公告)号：US11088240B2

公开(公告)日：2021-08-10

申请号：US16445011

申请日：2019-06-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-Sun Kim ,  Sang-Yeol Kang ,  Kyoo-Ho Jung ,  Kyu-Ho Cho ,  Hyo-Sik Mun

IPC: H01L27/00 ,  H01G4/10 ,  H01L49/02 ,  H01G4/008 ,  H01L27/108

Abstract: A capacitor includes a lower electrode including a first metal material and having a first crystal size in a range of a few nanometers, a dielectric layer covering the lower electrode and having a second crystal size that is a value of a crystal expansion ratio times the first crystal size and an upper electrode including a second metal material and covering the dielectric layer. The upper electrode has a third crystal size smaller than the second crystal size.

公开(公告)号：US20150091133A1

公开(公告)日：2015-04-02

申请号：US14315770

申请日：2014-06-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyu-Ho Cho ,  Hyun-Jeong Yang ,  Se-Hoon Oh ,  Yong-Jae Lee ,  Ki-Vin IM ,  Jae-Soon Lim ,  Han-Jin Lim ,  Jae-Wan Chang ,  Chang-Hwa Jung

IPC: H01L49/02

CPC classification number: H01L28/75 ,  H01L27/10855 ,  H01L28/65 ,  H01L28/91

Abstract: In a semiconductor device and in methods of formation thereof, a semiconductor device comprises a substrate, a lower electrode on the substrate, and a dielectric layer on the lower electrode. An adhesion layer is positioned on the dielectric layer and an upper electrode is positioned on the adhesion layer. The adhesion layer contacts the dielectric layer and the upper electrode, and comprises a conductive material.

Abstract translation: 在半导体器件及其形成方法中，半导体器件包括衬底，衬底上的下电极和下电极上的电介质层。 粘合层位于介电层上，上电极位于粘合层上。 粘合层接触电介质层和上电极，并且包括导电材料。

公开(公告)号：US09437420B2

公开(公告)日：2016-09-06

申请号：US14688564

申请日：2015-04-16

Applicant: Samsung Electronics Co., Ltd. ,  NaMLab gGmbH

Inventor： Kyu-Ho Cho ,  Youn-Soo Kim ,  Han-Jin Lim ,  Steve Knebel ,  Uwe Schroeder

IPC: H01L21/00 ,  H01L21/02 ,  H01L27/108 ,  H01L49/02

CPC classification number: H01L21/02192 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10894 ,  H01L28/40

Abstract: A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.

Abstract translation: 电容器可以包括在结晶的金属氧化物介电层上的具有第一介电常数和非晶金属氧化物介电层的结晶的金属氧化物电介质层，其中非晶金属氧化物介电层的第二介电常数小于第一电介质 并且大于氧化铝的介电常数。

公开(公告)号：US20150357399A1

公开(公告)日：2015-12-10

申请号：US14688564

申请日：2015-04-16

Applicant: Samsung Electronics Co., Ltd. ,  NaMLab gGmbH

Inventor： Kyu-Ho Cho ,  Youn-Soo Kim ,  Han-Jin Lim ,  Steve Knebel ,  Uwe Schroeder

IPC: H01L49/02 ,  H01L21/02

CPC classification number: H01L21/02192 ,  H01L27/10814 ,  H01L27/10817 ,  H01L27/10855 ,  H01L27/10885 ,  H01L27/10894 ,  H01L28/40

Abstract: A capacitor can include a crystallized metal oxide dielectric layer having a first dielectric constant and an amorphous metal oxide dielectric layer, on the crystallized metal oxide dielectric layer, where the amorphous metal oxide dielectric layer has a second dielectric constant that is less than the first dielectric constant and is greater than a dielectric constant of aluminum oxide.

Abstract translation: 电容器可以包括在结晶的金属氧化物介电层上的具有第一介电常数和非晶金属氧化物介电层的结晶的金属氧化物电介质层，其中非晶金属氧化物介电层的第二介电常数小于第一电介质 并且大于氧化铝的介电常数。

公开(公告)号：US20130170377A1

公开(公告)日：2013-07-04

申请号：US13734044

申请日：2013-01-04

Applicant: Samsung Electronics Co., Ltd

Inventor： Jun-Seok Hong ,  Sang-lg Rho ,  Seung-Min Baek ,  Ho-Cheol Lee ,  Kyu-Ho Cho ,  Jae-Jin Kim ,  Jong-Hun Kim

IPC: H04L29/06

CPC classification number: H04L69/22

Abstract: An apparatus and a method for identify an application to which a packet flow belongs in a communication system. In the method, characteristic information of a first application is selected. Bit lines of a position designated by a mask included in the characteristic information are examined from packets transferred via the packet flow. A ratio of the number of examination results of coincidence to the number of all input packets is calculated. When the ratio exceeds a first threshold included in the characteristic information, it is determined that the packet flow belongs to the first application.

Abstract translation: 用于识别分组流在通信系统中所属的应用的装置和方法。 在该方法中，选择第一应用的特征信息。 从由分组流传送的分组检查由特征信息中包括的掩码指定的位置的位线。 计算一致性检查结果与所有输入数据包数的比例。 当比率超过包括在特征信息中的第一阈值时，确定分组流属于第一应用。