公开(公告)号：US20240282573A1

公开(公告)日：2024-08-22

申请号：US18512923

申请日：2023-11-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jaehee Jung ,  Seik Jang ,  Jaeseok Kim ,  Hyungkyu Kim ,  Seungjin Baek ,  Changsun Yeo ,  Kwangjin Yoo ,  Jinhwan Jeong ,  Hyeonjeong Jung ,  Wonchul Choi

IPC: H01L21/02 ,  C23C16/04 ,  C23C16/40 ,  C23C16/458 ,  C23C16/50 ,  H01J37/32 ,  H01L21/3213

CPC classification number: H01L21/0228 ,  C23C16/042 ,  C23C16/402 ,  C23C16/4583 ,  C23C16/50 ,  H01J37/32449 ,  H01L21/02164 ,  H01L21/02274 ,  H01L21/32139 ,  H01J2237/332

Abstract: A method for processing a substrate including: loading a plurality of first substrates and a plurality of second substrates on which mask patterns are formed into a process chamber; supplying a first pretreatment gas into the process chamber; surface processing the plurality of first substrates using first plasma generated from the first pretreatment gas; supplying a second pretreatment gas into the process chamber; surface processing the plurality of first substrates and the plurality of second substrates using second plasma generated from the second pretreatment gas; supplying precursors to be adsorbed onto each of the plurality of first substrates and the plurality of second substrates into the process chamber; supplying a reactive gas into the process chamber; and depositing a thin film covering the mask patterns on each of the plurality of first substrates and the plurality of second substrates using third plasma generated from the reactive gas and the precursors.