公开(公告)号：US11769830B2

公开(公告)日：2023-09-26

申请号：US17038020

申请日：2020-09-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchan Yun ,  Donghwan Han

IPC: H01L29/78 ,  H01L27/06 ,  H01L27/088 ,  H01L21/822 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423 ,  H01L27/12 ,  H01L21/8234

CPC classification number: H01L29/7827 ,  H01L21/8221 ,  H01L21/823412 ,  H01L27/0688 ,  H01L27/088 ,  H01L27/124 ,  H01L29/42392 ,  H01L29/66666 ,  H01L29/78642 ,  H01L29/78696

Abstract: A semiconductor device includes a plurality of channel layers disposed on an active region of a substrate and spaced apart from each other in a first direction, a first gate structure surrounding the plurality of channel layers, first source/drain regions disposed on the active region on both lateral sides of the first gate structure and contacting the plurality of channel layers and spaced apart from each other in a second direction, an element isolation layer disposed on an upper portion of the first gate structure, a semiconductor layer disposed on the element isolation layer and having a vertical region extending in the first direction and including second source/drain regions spaced apart from each other in the first direction, and a second gate structure disposed to surround a portion of the vertical region. The semiconductor device further includes first to fourth contact plugs.

公开(公告)号：US11935953B2

公开(公告)日：2024-03-19

申请号：US17967950

申请日：2022-10-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghwan Han ,  Seungchan Yun

IPC: H01L29/78 ,  H01L21/8238 ,  H01L27/092 ,  H01L27/12 ,  H01L29/08

CPC classification number: H01L29/785 ,  H01L21/823864 ,  H01L27/0924 ,  H01L27/1211 ,  H01L21/823814 ,  H01L29/0847 ,  H01L2029/7858

Abstract: A semiconductor device includes a substrate including an active region that extends in a first direction; a gate structure that intersects the active region and that extends in a second direction; a source/drain region on the active region on at least one side of the gate structure; a contact plug on the source/drain region on the at least one side of the gate structure; and a contact insulating layer on sidewalls of the contact plug, wherein a lower end of the contact plug is closer to the substrate than a lower end of the source/drain region.

公开(公告)号：US20230411517A1

公开(公告)日：2023-12-21

申请号：US18239677

申请日：2023-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchan Yun ,  Donghwan Han

IPC: H01L29/78 ,  H01L27/06 ,  H01L27/088 ,  H01L29/66 ,  H01L29/786 ,  H01L29/423 ,  H01L21/822 ,  H01L27/12 ,  H01L21/8234

CPC classification number: H01L29/7827 ,  H01L27/0688 ,  H01L27/088 ,  H01L29/66666 ,  H01L21/823412 ,  H01L29/78696 ,  H01L29/42392 ,  H01L21/8221 ,  H01L27/124 ,  H01L29/78642

Abstract: A semiconductor device includes a plurality of channel layers disposed on an active region of a substrate and spaced apart from each other in a first direction, a first gate structure surrounding the plurality of channel layers, first source/drain regions disposed on the active region on both lateral sides of the first gate structure and contacting the plurality of channel layers and spaced apart from each other in a second direction, an element isolation layer disposed on an upper portion of the first gate structure, a semiconductor layer disposed on the element isolation layer and having a vertical region extending in the first direction and including second source/drain regions spaced apart from each other in the first direction, and a second gate structure disposed to surround a portion of the vertical region. The semiconductor device further includes first to fourth contact plugs.

公开(公告)号：US11563108B2

公开(公告)日：2023-01-24

申请号：US17011444

申请日：2020-09-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchan Yun ,  Donghwan Han

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/84

Abstract: A semiconductor device including: a first structure including: a first semiconductor pattern protruding from a substrate, the first semiconductor pattern being a channel; a first conductive pattern surrounding the first semiconductor pattern, the first conductive pattern being a gate electrode; a first impurity region under the first semiconductor pattern, the first impurity region contacting the first semiconductor pattern, the first impurity region being a source or drain region; and a second impurity region contacting the first semiconductor pattern, the second impurity region being the other of the source or drain region; and a second structure including: second semiconductor patterns spaced apart from each other, each of the second semiconductor patterns protruding from the substrate; second conductive patterns surrounding the second semiconductor patterns, respectively; and first contact plugs connected to the second conductive patterns, wherein the first structure is a vfet, and the second structure includes a resistor or a capacitor.

公开(公告)号：US20210159327A1

公开(公告)日：2021-05-27

申请号：US17011444

申请日：2020-09-03

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchan Yun ,  Donghwan Han

IPC: H01L29/66 ,  H01L29/78

Abstract: A semiconductor device including: a first structure including: a first semiconductor pattern protruding from a substrate, the first semiconductor pattern being a channel; a first conductive pattern surrounding the first semiconductor pattern, the first conductive pattern being a gate electrode; a first impurity region under the first semiconductor pattern, the first impurity region contacting the first semiconductor pattern, the first impurity region being a source or drain region; and a second impurity region contacting the first semiconductor pattern, the second impurity region being the other of the source or drain region; and a second structure including:
second semiconductor patterns spaced apart from each other, each of the second semiconductor patterns protruding from the substrate; second conductive patterns surrounding the second semiconductor patterns, respectively; and first contact plugs connected to the second conductive patterns, wherein the first structure is a vfet, and the second structure includes a resistor or a capacitor.

公开(公告)号：US12278285B2

公开(公告)日：2025-04-15

申请号：US18239677

申请日：2023-08-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchan Yun ,  Donghwan Han

IPC: H01L29/78 ,  H01L21/822 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L27/12 ,  H01L29/423 ,  H01L29/66 ,  H01L29/786

Abstract: A semiconductor device includes a plurality of channel layers disposed on an active region of a substrate and spaced apart from each other in a first direction, a first gate structure surrounding the plurality of channel layers, first source/drain regions disposed on the active region on both lateral sides of the first gate structure and contacting the plurality of channel layers and spaced apart from each other in a second direction, an element isolation layer disposed on an upper portion of the first gate structure, a semiconductor layer disposed on the element isolation layer and having a vertical region extending in the first direction and including second source/drain regions spaced apart from each other in the first direction, and a second gate structure disposed to surround a portion of the vertical region. The semiconductor device further includes first to fourth contact plugs.

公开(公告)号：US12176417B2

公开(公告)日：2024-12-24

申请号：US18329206

申请日：2023-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungchan Yun ,  Donghwan Han

IPC: H01L29/66 ,  H01L21/8234 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78

Abstract: A semiconductor device including a substrate including first and second regions, a first transistor on the first region and including a first semiconductor pattern protruding from the first region; a first gate structure covering an upper surface and sidewall of the first semiconductor pattern; first source/drain layers on the first semiconductor pattern at opposite sides of the first gate structure, upper surfaces of the first source/drain layers being closer to the substrate than an uppermost surface of the first gate structure; and a second transistor on the second region and including a second semiconductor pattern protruding from the second region; a second gate structure covering a sidewall of the second semiconductor pattern; and a second source/drain layer under the second semiconductor pattern; and a third source/drain layer on the second semiconductor pattern, wherein the upper surface of the first region is lower than the upper surface of the second region.

公开(公告)号：US11482619B2

公开(公告)日：2022-10-25

申请号：US17026551

申请日：2020-09-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Donghwan Han ,  Seungchan Yun

IPC: H01L29/78 ,  H01L27/092 ,  H01L27/12 ,  H01L21/8238 ,  H01L29/08

Abstract: A semiconductor device includes a substrate including an active region that extends in a first direction; a gate structure that intersects the active region and that extends in a second direction; a source/drain region on the active region on at least one side of the gate structure; a contact plug on the source/drain region on the at least one side of the gate structure; and a contact insulating layer on sidewalls of the contact plug, wherein a lower end of the contact plug is closer to the substrate than a lower end of the source/drain region.

公开(公告)号：US12224336B2

公开(公告)日：2025-02-11

申请号：US18088550

申请日：2022-12-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Seungchan Yun ,  Donghwan Han

IPC: H01L29/66 ,  H01L29/78 ,  H01L21/8234 ,  H01L21/84

Abstract: A semiconductor device including: a first structure including: a first semiconductor pattern protruding from a substrate, the first semiconductor pattern being a channel; a first conductive pattern surrounding the first semiconductor pattern, the first conductive pattern being a gate electrode; a first impurity region under the first semiconductor pattern, the first impurity region contacting the first semiconductor pattern, the first impurity region being a source or drain region; and a second impurity region contacting the first semiconductor pattern, the second impurity region being the other of the source or drain region; and a second structure including: second semiconductor patterns spaced apart from each other, each of the second semiconductor patterns protruding from the substrate; second conductive patterns surrounding the second semiconductor patterns, respectively; and first contact plugs connected to the second conductive patterns, wherein the first structure is a vfet, and the second structure includes a resistor or a capacitor.

公开(公告)号：US20230317824A1

公开(公告)日：2023-10-05

申请号：US18329206

申请日：2023-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Seungchan Yun ,  Donghwan Han

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423

CPC classification number: H01L29/6656 ,  H01L29/1033 ,  H01L29/42392 ,  H01L29/7851 ,  H01L29/7855 ,  H01L2029/7858

Abstract: A semiconductor device including a substrate including first and second regions, a first transistor on the first region and including a first semiconductor pattern protruding from the first region; a first gate structure covering an upper surface and sidewall of the first semiconductor pattern; first source/drain layers on the first semiconductor pattern at opposite sides of the first gate structure, upper surfaces of the first source/drain layers being closer to the substrate than an uppermost surface of the first gate structure; and a second transistor on the second region and including a second semiconductor pattern protruding from the second region; a second gate structure covering a sidewall of the second semiconductor pattern; and a second source/drain layer under the second semiconductor pattern; and a third source/drain layer on the second semiconductor pattern, wherein the upper surface of the first region is lower than the upper surface of the second region.