公开(公告)号：US20200066978A1

公开(公告)日：2020-02-27

申请号：US16423557

申请日：2019-05-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Pyojin JEON ,  Jaeho JUNG ,  Gwang-Hyun BAEK

IPC: H01L45/00

Abstract: A variable resistance memory device includes an interlayer insulating structure on a substrate, the interlayer insulating structure having a hole, a bottom electrode in a lower portion of the hole, and a pattern in an upper portion of the hole, the pattern including at least one of a phase change pattern or an intermediate electrode, a sidewall of the pattern defining an angle with a top surface of the substrate, and the angle decreasing as a vertical distance from the substrate increases.

公开(公告)号：US20180006219A1

公开(公告)日：2018-01-04

申请号：US15414911

申请日：2017-01-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Hun SEO ,  Jung-Ik OH ,  Yoo-Chul KONG ,  Woo-Ram KIM ,  Jong-Chul PARK ,  Gwang-Hyun BAEK ,  Bok-Yeon WON ,  Hye-Jin CHOI

IPC: H01L45/00 ,  H01L27/24 ,  H01L43/12 ,  H01L27/22 ,  H01L43/08 ,  H01L43/02 ,  H01L43/10

CPC classification number: H01L45/1675 ,  H01L27/222 ,  H01L27/2427 ,  H01L27/2463 ,  H01L43/02 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12 ,  H01L45/06 ,  H01L45/08 ,  H01L45/1233 ,  H01L45/1253 ,  H01L45/142 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147

Abstract: In method of manufacturing a semiconductor memory device, a selection layer and a variable resistance layer may be sequentially formed on a substrate. A preliminary first mask extending in a first direction may be formed on the variable resistance layer. An upper mask extending in a second direction crossing the first direction may be formed on the variable resistance layer and the preliminary first mask. The preliminary first mask may be etched using the upper mask as an etching mask to form a first mask having a pillar shape. The variable resistance layer and the selection layer may be anisotropically etched using the first mask as an etching mask to form a pattern structure including a variable resistance pattern and selection pattern sequentially stacked. The pattern structure may have a pillar shape. Damages to the pattern structure may decrease.