公开(公告)号：US11984304B2

公开(公告)日：2024-05-14

申请号：US17543794

申请日：2021-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US09870900B2

公开(公告)日：2018-01-16

申请号：US14631083

申请日：2015-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kye Hyun Baek ,  Ohyung Kwon ,  Junghyun Cho ,  Haejoong Park

IPC: H01J37/32

CPC classification number: H01J37/32917 ,  H01J37/32807 ,  H01J37/3288

Abstract: Provided are methods and systems for managing semiconductor manufacturing equipment. A method may include preventive maintenance involving steps of disassembling, cleaning, and assembling parts of a chamber. The assembling of the parts may include checking whether the parts are correctly assembled, using reflectance and absorptivity of a high-frequency voltage applied to the parts.

公开(公告)号：US20240258084A1

公开(公告)日：2024-08-01

申请号：US18632060

申请日：2024-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

CPC classification number: H01J37/32724 ,  H01J2237/2001 ,  H01J2237/334

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US20220328291A1

公开(公告)日：2022-10-13

申请号：US17543794

申请日：2021-12-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US20160035545A1

公开(公告)日：2016-02-04

申请号：US14631083

申请日：2015-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kye Hyun Baek ,  Ohyung Kwon ,  Junghyun Cho ,  Haejoong Park

IPC: H01J37/32

CPC classification number: H01J37/32917 ,  H01J37/32807 ,  H01J37/3288

Abstract: Provided are methods and systems for managing semiconductor manufacturing equipment. A method may include preventive maintenance involving steps of disassembling, cleaning, and assembling parts of a chamber. The assembling of the parts may include checking whether the parts are correctly assembled, using reflectance and absorptivity of a high-frequency voltage applied to the parts.

Abstract translation: 提供了用于管理半导体制造设备的方法和系统。 一种方法可以包括预防性维护，其包括拆卸，清洁和组装室的部件的步骤。 部件的组装可以包括使用施加到部件的高频电压的反射率和吸收率来检查部件是否被正确组装。

公开(公告)号：US12211672B2

公开(公告)日：2025-01-28

申请号：US18632060

申请日：2024-04-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jongwoo Sun ,  Kyohyeok Kim ,  Taehwa Kim ,  Haejoong Park ,  Jewoo Han

IPC: H01J37/32

Abstract: An apparatus for plasma etching having an electrostatic chuck including a base layer, a bonding layer, an adsorption layer including a plurality of protrusions on the bonding layer and contacting a lower surface of a substrate, and an edge ring spaced apart from and surrounding a lateral surface of the substrate; a plurality of coolant suppliers injecting a coolant between the plurality of protrusions; a plurality of pipes supplying the coolant to the plurality of coolant suppliers to circulate the coolant in a predetermined direction; a cooling device in which the plasma etching process includes first and second operations, wherein the coolant is injected to cause the electrostatic chuck to reach a first temperature during the first operation, and reach a second temperature during the second operation; and a controller controlling a valve connected to the plurality of pipes to determine a circulation direction of the coolant.

公开(公告)号：US11430679B2

公开(公告)日：2022-08-30

申请号：US16821415

申请日：2020-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kwangnam Kim ,  Nohsung Kwak ,  Sungyeon Kim ,  Hyungjun Kim ,  Haejoong Park ,  Jongwoo Sun ,  Sangrok Oh ,  Ilyoung Han ,  Jungpyo Hong

IPC: H01L21/67 ,  H01L21/687 ,  H01L21/677 ,  H01L21/673

Abstract: A semiconductor manufacturing apparatus including at least one load module including a load port on which a substrate container is located, a plurality of substrates being mountable on the substrate container; at least one loadlock module including a loadlock chamber directly connected to the substrate container, the loadlock chamber interchangeably having atmospheric pressure and vacuum pressure, a first transfer robot within the loadlock chamber, and a substrate stage within the loadlock chamber, the plurality of substrates being mountable on the substrate stage; a transfer module including a transfer chamber connected to the loadlock chamber, a second transfer robot within the transfer chamber, and a substrate aligner within the transfer chamber; and at least one process module including at least one process chamber connected to the transfer module.

公开(公告)号：US09912258B2

公开(公告)日：2018-03-06

申请号：US14842936

申请日：2015-09-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Haejoong Park ,  Hongmyoung Kim ,  Kye Hyun Baek ,  Sangkyu Park

IPC: H01T23/00 ,  H02N13/00 ,  H01L21/67 ,  H01L21/683

CPC classification number: H02N13/00 ,  H01L21/67109 ,  H01L21/6831

Abstract: An electrostatic chuck assembly, including an electrostatic chuck on which a substrate is loaded; a channel that provides a flow passage for coolant in the electrostatic chuck, the channel having a first opening at a first end corresponding to a center of the substrate and a second opening at a second end corresponding to an edge of the substrate; and a valve box to control a flow direction of the coolant in the channel, the valve box including a first supply valve to control an introduction of the coolant into the first opening; a first return valve to control a drainage of the coolant from the second opening; a second supply valve to control an introduction of the coolant into the second opening; and a second return valve to control a drainage of the coolant from the first opening.