公开(公告)号：US11764107B2

公开(公告)日：2023-09-19

申请号：US17144226

申请日：2021-01-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungdeog Choi ,  JungWoo Seo ,  Sangyeon Han ,  Hyun-Woo Chung ,  Hongrae Kim ,  Yoosang Hwang

IPC: H01L21/768 ,  H01L23/498 ,  H10B12/00 ,  H10B61/00 ,  H10B63/00 ,  H10N70/00 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532 ,  H10N70/20

CPC classification number: H01L21/7682 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/498 ,  H01L23/528 ,  H01L23/5226 ,  H01L23/5329 ,  H10B12/315 ,  H10B61/22 ,  H10B63/30 ,  H10B63/80 ,  H10N70/011 ,  H10N70/8825 ,  H10N70/8828 ,  H10N70/8833 ,  H10N70/8836 ,  H01L2221/1063 ,  H01L2924/0002 ,  H10B12/0335 ,  H10B12/053 ,  H10N70/20 ,  H10N70/231 ,  H10N70/826 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a pair of line patterns disposed on a substrate. A contact plug is disposed between the pair of line patterns and an air gap is disposed between the contact plug and the line patterns. A landing pad extends from a top end of the contact plug to cover a first part of the air gap and an insulating layer is disposed on a second part of the air gap, which is not covered by the landing pad.

公开(公告)号：US20170076974A1

公开(公告)日：2017-03-16

申请号：US15343712

申请日：2016-11-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Byoungdeog Choi ,  JungWoo Seo ,  Sangyeon Han ,  Hyun-Woo Chung ,  Hongrae Kim ,  Yoosang Hwang

IPC: H01L21/768 ,  H01L23/532 ,  H01L27/22 ,  H01L27/108 ,  H01L27/24 ,  H01L23/528 ,  H01L23/522

CPC classification number: H01L21/7682 ,  H01L21/76816 ,  H01L21/76877 ,  H01L21/76897 ,  H01L23/498 ,  H01L23/5226 ,  H01L23/528 ,  H01L23/5329 ,  H01L27/10814 ,  H01L27/10855 ,  H01L27/10876 ,  H01L27/228 ,  H01L27/2436 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/143 ,  H01L45/144 ,  H01L45/146 ,  H01L45/147 ,  H01L45/16 ,  H01L2221/1063 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A semiconductor device includes a pair of line patterns disposed on a substrate. A contact plug is disposed between the pair of line patterns and an air gap is disposed between the contact plug and the line patterns. A landing pad extends from a top end of the contact plug to cover a first part of the air gap and an insulating layer is disposed on a second part of the air gap, which is not covered by the landing pad.

Abstract translation: 半导体器件包括设置在衬底上的一对线图案。 接触插头设置在一对线路图案之间，并且气隙设置在接触插塞和线路图案之间。 着陆垫从接触塞的顶端延伸以覆盖气隙的第一部分，并且绝缘层设置在气隙的第二部分上，其未被着陆垫覆盖。

公开(公告)号：US10910261B2

公开(公告)日：2021-02-02

申请号：US16577429

申请日：2019-09-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byoungdeog Choi ,  JungWoo Seo ,  Sangyeon Han ,  Hyun-Woo Chung ,  Hongrae Kim ,  Yoosang Hwang

IPC: H01L27/108 ,  H01L21/768 ,  H01L23/498 ,  H01L27/22 ,  H01L27/24 ,  H01L45/00 ,  H01L23/522 ,  H01L23/528 ,  H01L23/532

Abstract: A semiconductor device includes bit line structures on a substrate, the bit line structures extending along a first direction and being spaced apart from each other along a second direction perpendicular to the first direction, contact plugs spaced apart from each other along the first direction and being on active regions of the substrate between adjacent bit line structures, a linear spacer on each longitudinal sidewall of a bit line structure, landing pads on the contact plugs, respectively, the landing pads being electrically connected to the contact plugs, respectively, and landing pads that are adjacent to each other along the first direction being offset with respect to each other along the second direction, as viewed in a top view, a conductive pad between each of the contact plugs and a corresponding active region, a vertical axes of the conductive pad and corresponding active region being horizontally offset.