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    SEMICONDUCTOR DEVICE
    1.
    发明申请
    SEMICONDUCTOR DEVICE 有权

    公开(公告)号：US20250070022A1

    公开(公告)日：2025-02-27

    申请号：US18634325

    申请日：2024-04-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Dongkyun LEE ,  Hyejin KIM ,  Yonghyeok SON ,  Jichang SIM ,  Joo-Sung LEE ,  Yujin CHO

    IPC: H01L23/528 ,  H01L23/522 ,  H10B12/00

    Abstract: A semiconductor device may include a substrate including a cell array region, a core region, and a peripheral circuit region, a core circuit wiring on the core region of the substrate, a core signal wiring overlapping the core circuit wiring, and a contact plug between the core circuit wiring and the core signal wiring. The contact plug may connect the core circuit wiring to the core signal wiring. A positional relationship between the core signal wiring and the contact plug may be different depending on distance from the peripheral circuit region.

    SEMICONDUCTOR PACKAGE INCLUDING THERMAL INTERFACIAL MATERIAL PATTERNS
    3.
    发明申请
    SEMICONDUCTOR PACKAGE INCLUDING THERMAL INTERFACIAL MATERIAL PATTERNS 有权

    公开(公告)号：US20250029886A1

    公开(公告)日：2025-01-23

    申请号：US18604875

    申请日：2024-03-14

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Myungsam KANG ,  Chilwoo KWON ,  Hyejin KIM ,  Okgyeong PARK

    IPC: H01L23/367 ,  H01L23/00 ,  H01L23/373 ,  H01L25/18

    Abstract: A semiconductor package includes: a first semiconductor chip disposed on a package substrate; a second semiconductor chip adjacent to the first semiconductor chip in a horizontal direction and disposed on the package substrate; a plurality of first thermal interfacial material patterns overlapping the first semiconductor chip in a vertical direction; a plurality of second thermal interfacial material patterns overlapping the second semiconductor chip in the vertical direction; and a first non-metal thermal conductive layer disposed between the plurality of first thermal interfacial material patterns, wherein the plurality of first thermal interfacial materials are spaced apart from the plurality of second thermal interfacial materials in the horizontal direction, and a thermal conductivity of the first non-metal thermal conductive layer in the horizontal direction is lower than a thermal conductivity of the first non-metal thermal conductive layer in the vertical direction.

    SERVER FOR GENERATING USER-CUSTOMIZED COMMUNITY LIST FOR USER DEVICE, AND OPERATING METHOD OF THE SERVER
    4.
    发明公开
    SERVER FOR GENERATING USER-CUSTOMIZED COMMUNITY LIST FOR USER DEVICE, AND OPERATING METHOD OF THE SERVER 审中-公开

    公开(公告)号：US20230291953A1

    公开(公告)日：2023-09-14

    申请号：US18120853

    申请日：2023-03-13

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dosung KIM ,  Hyejin KIM

    IPC: H04N21/2668 ,  H04N21/258 ,  H04N21/25

    CPC classification number: H04N21/2668 ,  H04N21/252 ,  H04N21/25891

    Abstract: Provided is a method of generating a user-customized community list that includes obtaining, from a user device, a usage history of the user device, identifying a device group corresponding to the user device from a plurality of device groups, based on the usage history of the user device, obtaining a community list comprising at least one community corresponding to the device group, each community in the community list providing a communication service between members of the respective community, identifying a content information corresponding to a first content being used in the user device, generating the user-customized community list based on the content information and the community list, the user-customized community list comprising at least one first community corresponding to the first content, and at least one second community associated with the first content, and transmitting the user-customized community list to the user device.

    DISPLAY DEVICE AND CONTROL METHOD THEREFOR
    5.
    发明公开
    DISPLAY DEVICE AND CONTROL METHOD THEREFOR 审中-公开

    公开(公告)号：US20230178049A1

    公开(公告)日：2023-06-08

    申请号：US18104492

    申请日：2023-02-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sungjin LIM ,  Changhoon KIM ,  Hyejin KIM ,  Jeongphil SEO

    IPC: G09G3/36

    CPC classification number: G09G3/3677 ,  G09G3/3688 ,  G09G2340/0435

    Abstract: A display device comprises: a panel driving unit comprising panel driving circuitry; a display panel including a plurality of pixels; and a processor configured to control the panel driving unit, wherein: the processor is configured to: control the panel driving unit so that gate signals are sequentially output to a plurality of gate lines one gate line at a time, to process, in a first mode, image data in a first driving frequency, and control the panel driving unit so that the gate signals are output to the plurality of gate lines at least two gate lines at a time, to process, in a second mode, the image data in a second driving frequency higher than the first driving frequency; wherein, in the second mode, the respective gate lines output to the plurality of gate lines at least two gate lines at a time can have output timings that differ from each other.

    SEMICONDUCTOR DEVICE INCLUDING PERIPHERAL INSULATING STRUCTURE
    6.
    发明申请
    SEMICONDUCTOR DEVICE INCLUDING PERIPHERAL INSULATING STRUCTURE 有权

    公开(公告)号：US20240431098A1

    公开(公告)日：2024-12-26

    申请号：US18654257

    申请日：2024-05-03

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dongkyun LIM ,  Kyumin KIM ,  Hyejin KIM ,  Seungyoon SONG

    IPC: H10B12/00

    Abstract: A semiconductor device includes bitlines on a cell region of a substrate; a contact plug between the bitlines; a landing pad on the contact plug; a peripheral gate on a peripheral circuit region of the substrate; a lower interlayer insulating layer covering a side surface of the peripheral gate; a peripheral contact plug penetrating through the lower interlayer insulating layer; peripheral interconnection layers on the lower interlayer insulating layer and the peripheral contact plug; and peripheral insulating structures passing between the peripheral interconnection layers, wherein the peripheral insulating structures include a first peripheral insulating structure partially penetrating through the lower interlayer insulating layer, and wherein the first peripheral insulating structure includes a first peripheral insulating layer, a second peripheral insulating layer on the first peripheral insulating layer and passing between the peripheral interconnection layers, and a mixture layer between the lower interlayer insulating layer and the first peripheral insulating layer.

    INSULATION STRUCTURES AND PRINTED CIRCUIT BOARD INCLUDING THE SAME
    9.
    发明申请
    INSULATION STRUCTURES AND PRINTED CIRCUIT BOARD INCLUDING THE SAME 有权

    公开(公告)号：US20220078907A1

    公开(公告)日：2022-03-10

    申请号：US17223430

    申请日：2021-04-06

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyejin KIM

    IPC: H05K1/03 ,  H05K1/02 ,  H05K1/11 ,  B32B27/20 ,  B32B27/38 ,  B32B27/08

    Abstract: An insulation structure includes: a first resin layer including first fillers; a second resin layer on the first resin layer and including second fillers; and a third resin layer on the second resin layer and including third fillers. A diameter of each of the first fillers may be more than about 200 nm and equal to or less than about 500 nm. A diameter of each of the second fillers may be more than about 10 nm and equal to or less than about 200 nm. A diameter of each of the third fillers may be equal to or less than about 10 nm. An arithmetic average roughness (Ra) and a ten point average roughness (Rz) of a surface of the insulation structure may be equal to or less than about 30 nm and equal to or less than about 100 nm, respectively.

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