公开(公告)号：US20230307227A1

公开(公告)日：2023-09-28

申请号：US18189556

申请日：2023-03-24

Applicant: Samsung Electronics Co., Ltd. ,  DNF Co., Ltd.

Inventor： Sunhye HWANG ,  Sung Gi KIM ,  Jihyun LEE ,  Yujin CHO ,  Seung SON ,  Gyun Sang LEE ,  Younjoung CHO ,  Byungkeun HWANG

IPC: H01L21/02 ,  C23C16/455 ,  C23C16/44 ,  C23C16/40

CPC classification number: H01L21/02216 ,  C23C16/45553 ,  H01L21/02164 ,  C23C16/4408 ,  C23C16/401

Abstract: Provided are a silicon precursor having a heterocyclic group, a composition for depositing a silicon-containing layer including the same, and a method of depositing a silicon-containing layer using the same. The silicon precursor is represented by Formula 1.




In Formula 1, A1 is a heterocyclic group including one or more nitrogen, and R1 is hydrogen or an alkyl group of 1-6 carbon atoms. R2 and R3 may be each independently an alkyl group of 1-6 carbon atoms.

公开(公告)号：US20250070022A1

公开(公告)日：2025-02-27

申请号：US18634325

申请日：2024-04-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongkyun LEE ,  Hyejin KIM ,  Yonghyeok SON ,  Jichang SIM ,  Joo-Sung LEE ,  Yujin CHO

IPC: H01L23/528 ,  H01L23/522 ,  H10B12/00

Abstract: A semiconductor device may include a substrate including a cell array region, a core region, and a peripheral circuit region, a core circuit wiring on the core region of the substrate, a core signal wiring overlapping the core circuit wiring, and a contact plug between the core circuit wiring and the core signal wiring. The contact plug may connect the core circuit wiring to the core signal wiring. A positional relationship between the core signal wiring and the contact plug may be different depending on distance from the peripheral circuit region.

公开(公告)号：US20230407051A1

公开(公告)日：2023-12-21

申请号：US18206187

申请日：2023-06-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun LEE ,  Sunggi KIM ,  Yujin CHO ,  Sunhye HWANG ,  Seung SON ,  Gyunsang LEE ,  Younjoung CHO ,  Byungkeun HWANG

IPC: C08K5/5435 ,  C23C16/40 ,  C23C16/453 ,  H01L27/088 ,  H01L21/8234

CPC classification number: C08K5/5435 ,  C23C16/401 ,  C23C16/453 ,  H01L27/088 ,  H01L21/8234

Abstract: A silicon compound, a composition for depositing a silicon-containing film, a process of forming a silicon-containing film, and a method of manufacturing an integrated circuit device, the silicon compound is represented by Chemical Formula (1):