公开(公告)号：US09381498B2

公开(公告)日：2016-07-05

申请号：US14680405

申请日：2015-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonsu Heo ,  Jongmin Lee ,  Kyunghae Lee ,  Jun Chwae ,  Mooho Lee

IPC: B01J21/08 ,  C07C31/20 ,  B01J23/78 ,  C07C29/143 ,  B01J37/04 ,  B01J37/06 ,  B01J37/02

CPC classification number: B01J23/78 ,  B01J37/0201 ,  B01J37/035 ,  B01J37/04 ,  B01J37/06 ,  C07C29/143 ,  C07C29/149 ,  C07C31/207

Abstract: A method for preparing a hydrogenation catalyst by mixing a copper salt with colloidal silica to form a precipitate, washing the formed precipitate to remove anions of the copper salt from the precipitate, and impregnating the anion-removed precipitate with an alkali metal to form a hydrogenation catalyst; and a method for preparing a diol from a lactone using the hydrogenation catalyst.

Abstract translation: 一种通过将铜盐与胶体二氧化硅混合以形成沉淀物来制备氢化催化剂的方法，洗涤形成的沉淀物以从沉淀物中除去铜盐的阴离子，并用碱金属浸渍阴离子去除的沉淀物以形成氢化 催化剂; 以及使用该氢化催化剂从内酯制备二醇的方法。

公开(公告)号：US20160030928A1

公开(公告)日：2016-02-04

申请号：US14680405

申请日：2015-04-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonsu Heo ,  Jongmin Lee ,  Kyunghae Lee ,  Jun Chwae ,  Mooho Lee

IPC: B01J23/78 ,  B01J37/02 ,  B01J37/06 ,  C07C29/143 ,  B01J37/04

CPC classification number: B01J23/78 ,  B01J37/0201 ,  B01J37/035 ,  B01J37/04 ,  B01J37/06 ,  C07C29/143 ,  C07C29/149 ,  C07C31/207

Abstract: A method for preparing a hydrogenation catalyst by mixing a copper salt with colloidal silica to form a precipitate, washing the formed precipitate to remove anions of the copper salt from the precipitate, and impregnating the anion-removed precipitate with an alkali metal to form a hydrogenation catalyst; and a method for preparing a diol from a lactone using the hydrogenation catalyst.

Abstract translation: 一种通过将铜盐与胶体二氧化硅混合以形成沉淀物来制备氢化催化剂的方法，洗涤形成的沉淀物以从沉淀物中除去铜盐的阴离子，并用碱金属浸渍阴离子去除的沉淀物以形成氢化 催化剂; 以及使用氢化催化剂从内酯制备二醇的方法。

公开(公告)号：US20240066515A1

公开(公告)日：2024-02-29

申请号：US18450484

申请日：2023-08-16

Applicant: Samsung Electronics Co., Ltd. ,  jk global co., ltd.

Inventor： Sukeun Kuk ,  Taehun Yeon ,  Hyun Chul Lee ,  Minseok Koo ,  Hyukjae Kwon ,  Dongsik Yang ,  Sehyeong Oh ,  Sangmin Ji ,  Hyeonsu Heo

IPC: B01J38/02 ,  B01J21/18 ,  B01J23/34 ,  B01J31/02

CPC classification number: B01J38/02 ,  B01J21/18 ,  B01J23/34 ,  B01J31/0249

Abstract: An organic-inorganic composite catalyst wherein the organic-inorganic composite catalyst includes a porous carbonaceous particle, a first compound; and a metal oxide particle, wherein the first compound and the metal oxide particle are supported on the porous carbonaceous particle, the first compound contains a polar functional group, an anion, or a combination thereof, the metal oxide is represented by the formula MaOb, wherein 0

公开(公告)号：US20250153152A1

公开(公告)日：2025-05-15

申请号：US18914771

申请日：2024-10-14

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation SUNGKYUNKWAN UNIVERSITY

Inventor： Hyeonsu Heo ,  Jiman Kim ,  Min Seok Koo ,  Mijong Kim ,  Hyun Chul Lee ,  Dongjin Ham ,  Jaewon Lee

IPC: B01J29/06 ,  B01J35/45 ,  B01J35/63 ,  B01J35/64 ,  B01J35/80 ,  B01J37/02 ,  B01J37/08

Abstract: A composite catalyst, wherein the composite catalyst includes a support including an aluminosilicate wherein the aluminosilicate comprises an amorphous aluminosilicate, and a first particle disposed on the support, the first particle including a metal, a metal oxide, or a combination thereof, wherein the composite catalyst is effective to remove a first compound from an unpurified air stream including the first compound.

公开(公告)号：US11981848B2

公开(公告)日：2024-05-14

申请号：US17238538

申请日：2021-04-23

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung Jun Park ,  Junghwa Kim ,  Tae Gon Kim ,  Taekhoon Kim ,  Young Mo Sung ,  Nayoun Won ,  Dongjin Yun ,  Mi Hye Lim ,  Shin Ae Jun ,  Hyeonsu Heo

IPC: C09K11/56 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

CPC classification number: C09K11/565 ,  B82Y20/00 ,  B82Y30/00 ,  B82Y40/00 ,  H10K50/115

Abstract: A quantum dot including a semiconductor nanocrystal core including Group III-V compound, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core, the first semiconductor nanocrystal shell including zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell, the second semiconductor nanocrystal shell including zinc and sulfur, and a composite/electronic device. The quantum dot does not include cadmium and the first semiconductor nanocrystal shell includes a polyvalent metal dopant at an interface with the second semiconductor nanocrystal shell.