公开(公告)号：US09607841B2

公开(公告)日：2017-03-28

申请号：US14510621

申请日：2014-10-09

申请人： Samsung Electronics Co., Ltd.

发明人： HyoJoong Kim ,  Songha Oh ,  Changgoo Jung

IPC分类号： H01L21/76 ,  H01L21/28 ,  H01L29/423 ,  H01L29/66 ,  H01L27/11524

CPC分类号： H01L21/28273 ,  H01L21/764 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/66825

摘要： Provided is a semiconductor device and a method of fabricating the same. The method may include forming trenches in a substrate and lower gate patterns on the substrate between the trenches, forming sacrificial patterns filling the trenches, forming a porous insulating layer on the lower gate patterns to cover top surfaces of the sacrificial patterns, removing the sacrificial patterns through pores of the porous insulating layer to form air gaps surrounded by the trenches and the porous insulating layer, and forming a liner insulating layer on inner surfaces of the trenches through the pores of the porous insulating layer.

公开(公告)号：US20180025926A1

公开(公告)日：2018-01-25

申请号：US15650187

申请日：2017-07-14

申请人： Samsung Electronics Co., Ltd.

发明人： HyoJoong Kim ,  Kyungsun Seo ,  Jongho Choi

IPC分类号： H01L21/67 ,  H01L21/768 ,  H01L21/263 ,  H01L21/677

CPC分类号： H01L21/67173 ,  C23C16/24 ,  C23C16/4412 ,  C23C16/45578 ,  H01L21/2636 ,  H01L21/67063 ,  H01L21/67109 ,  H01L21/67178 ,  H01L21/67207 ,  H01L21/67739 ,  H01L21/76831

摘要： A substrate processing apparatus includes an outer tube including an open bottom portion and a closed top portion, and an inner tube disposed in the outer tube and spaced apart from the outer tube. The inner tube includes a first opening at a top portion of the inner tube, a second opening at a bottom portion of the inner tube, and an inner sidewall including a plurality of exhaust holes on one side of the inner sidewall, the inner sidewall defining the first and second openings.

公开(公告)号：US09373513B2

公开(公告)日：2016-06-21

申请号：US14863931

申请日：2015-09-24

申请人： Samsung Electronics Co., Ltd.

发明人： HyoJoong Kim ,  ByeongHoon Kim ,  In-Young Kim ,  Sang Bong Shin ,  Songha Oh

IPC分类号： H01L29/788 ,  H01L21/28 ,  H01L29/423 ,  H01L27/115 ,  H01L21/02 ,  H01L21/321 ,  H01L21/3213 ,  H01L21/3215 ,  H01L21/762

CPC分类号： H01L21/28273 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/321 ,  H01L21/32133 ,  H01L21/32155 ,  H01L21/76224 ,  H01L27/11529 ,  H01L27/11543 ,  H01L29/42324 ,  H01L29/7881

摘要： A semiconductor device includes a substrate including an active region defined by a device isolation pattern and a floating gate on the active region. The floating gate includes an upper portion, a lower portion having a width greater than a width of the upper portion, and a step-difference portion between the upper portion and the lower portion. A dielectric pattern is on the floating gate, and a control gate is on the dielectric pattern. The lower portion of the floating gate has a height of about 4 nm or more.

摘要翻译： 半导体器件包括：衬底，其包括由器件隔离图案限定的有源区和有源区上的浮置栅。 浮动门包括上部，具有大于上部宽度的宽度的下部，以及上部和下部之间的台阶差部分。 电介质图案位于浮动栅极上，控制栅极位于电介质图案上。 浮栅的下部具有约4​​nm或更大的高度。

公开(公告)号：US20150108561A1

公开(公告)日：2015-04-23

申请号：US14510621

申请日：2014-10-09

申请人： Samsung Electronics Co., Ltd.

发明人： HyoJoong Kim ,  Songha Oh ,  Changgoo Jung

IPC分类号： H01L27/115 ,  H01L29/423 ,  H01L21/28

CPC分类号： H01L21/28273 ,  H01L21/764 ,  H01L27/11524 ,  H01L29/42324 ,  H01L29/66825

摘要： Provided is a semiconductor device and a method of fabricating the same. The method may include forming trenches in a substrate and lower gate patterns on the substrate between the trenches, forming sacrificial patterns filling the trenches, forming a porous insulating layer on the lower gate patterns to cover top surfaces of the sacrificial patterns, removing the sacrificial patterns through pores of the porous insulating layer to form air gaps surrounded by the trenches and the porous insulating layer, and forming a liner insulating layer on inner surfaces of the trenches through the pores of the porous insulating layer.

摘要翻译： 提供一种半导体器件及其制造方法。 该方法可以包括在衬底中形成沟槽并且在沟槽之间形成衬底上的下栅极图案，形成填充沟槽的牺牲图案，在下栅极图案上形成多孔绝缘层以覆盖牺牲图案的顶表面，去除牺牲图案 通过多孔绝缘层的孔形成由沟槽和多孔绝缘层包围的空气间隙，并且通过多孔绝缘层的孔在沟槽的内表面上形成衬里绝缘层。