公开(公告)号：US10793436B2

公开(公告)日：2020-10-06

申请号：US15805810

申请日：2017-11-07

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Hyeonjin Shin ,  Meeree Kim ,  Hyoyoung Lee ,  Yunhee Cho

IPC: C30B29/46 ,  C30B29/60 ,  C30B7/14 ,  C01B19/00 ,  B82Y30/00 ,  B82Y40/00 ,  B82Y10/00 ,  H01L29/06

Abstract: Example embodiments relate to a method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure, the method including preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition including a solvent, wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and the second bond connecting one of the two neighboring chalcogen elements and a hetero-element adjacent thereto, and binding energy of the second bond is 110% or less of the binding energy of the first bond, a 2D transition metal chalcogenide nanostructure prepared thereby, and a device including the 2D transition metal chalcogenide nanostructure.

公开(公告)号：US20180148334A1

公开(公告)日：2018-05-31

申请号：US15805810

申请日：2017-11-07

Applicant: Samsung Electronics Co., Ltd. ,  Research & Business Foundation Sungkyunkwan University

Inventor： Hyeonjin Shin ,  Meeree Kim ,  Hyoyoung Lee ,  Yunhee Cho

IPC: C01B19/00 ,  C30B29/46 ,  C30B7/14 ,  H01L29/06

Abstract: Example embodiments relate to a method of preparing a two-dimensional (2D) transition metal chalcogenide nanostructure, the method including preparing a 2D transition metal chalcogenide nanostructure by a reaction between a transition metal precursor and a chalcogen precursor in a composition including a solvent, wherein the chalcogen precursor is a compound including a first bond connecting two neighboring chalcogen elements and the second bond connecting one of the two neighboring chalcogen elements and a hetero-element adjacent thereto, and binding energy of the second bond is 110% or less of the binding energy of the first bond, a 2D transition metal chalcogenide nanostructure prepared thereby, and a device including the 2D transition metal chalcogenide nanostructure.

公开(公告)号：US20240226808A1

公开(公告)日：2024-07-11

申请号：US18404664

申请日：2024-01-04

Applicant: Samsung Electronics Co., Ltd.

Inventor： Mira Park ,  Heonkyu Kim ,  Kieung Lee ,  Hoigu Jang ,  Jiyoung Kim ,  Jua Ryu ,  Sojung Park ,  Mingyeong Shin ,  Jiwoong Shin ,  Jungsuk Oh ,  Taijin Yoon ,  Minseon Lee ,  Hyoyoung Lee ,  Jinhong Kim

IPC: B01D53/82 ,  B01D53/04 ,  B01J20/02 ,  B01J20/04 ,  B01J20/16 ,  B01J20/20 ,  B01J20/28 ,  B01J20/32 ,  B01J39/04 ,  B01J39/18 ,  B01J41/04 ,  B01J41/12 ,  B01J47/024 ,  B01J47/026

CPC classification number: B01D53/82 ,  B01D53/0407 ,  B01J20/0259 ,  B01J20/04 ,  B01J20/16 ,  B01J20/20 ,  B01J20/28052 ,  B01J20/3204 ,  B01J20/324 ,  B01J39/04 ,  B01J39/18 ,  B01J41/04 ,  B01J41/12 ,  B01J47/024 ,  B01J47/026 ,  B01D2253/102 ,  B01D2253/108 ,  B01D2257/2045 ,  B01D2257/2047 ,  B01D2257/302 ,  B01D2257/404 ,  B01D2257/406 ,  B01D2257/708

Abstract: A chemical filter includes a first buffer layer, at least one first filter layer disposed on the first buffer layer and including a pair of first air-permeable bodies facing each other and at least one first adsorption layer between the pair of first air-permeable bodies, and a second filter layer disposed on the first filter layer and including a pair of second air-permeable bodies facing each other and at least one second adsorption layer between the pair of second air-permeable bodies, wherein the first filter layer is configured to be attachable to and detachable from the second filter layer.

公开(公告)号：US10683208B2

公开(公告)日：2020-06-16

申请号：US15222345

申请日：2016-07-28

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hyeonjin Shin ,  Hyoyoung Lee ,  Yeoheung Yoon

IPC: B32B9/00 ,  C01B32/921 ,  C01B21/06 ,  B82Y40/00 ,  B82Y30/00

Abstract: A method of manufacturing a MXene nanosheet includes removing an A atomic layer from an inorganic compound having a formula of Mn+1AXn to form a nanosheet, the nanosheet having a formula of Mn+1XnTs, and reducing the nanosheet having a formula of Mn+1XnTs to form an MXene nanosheet, the MXene nanosheet having a formula of Mn+1Xn, wherein M is at least one of Group 3 transition metal, Group 4 transition metal, Group 5 transition metal, and Group 6 transition metal, A is at least one of a Group 12 element, Group 13 element, Group 14 element, Group 15 element and Group 16 element, X is one of carbon (C), nitrogen (N) and a combination thereof, Ts is one of oxide (O), epoxide, hydroxide (OH), alkoxide having 1-5 carbon atoms, fluoride (F), chloride (Cl), bromide (Br), iodide (I), and a combination thereof, and n is one of 1, 2 and 3.