公开(公告)号：US20190165114A1

公开(公告)日：2019-05-30

申请号：US15990983

申请日：2018-05-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： JONGHAN LEE ,  WANDON KIM ,  JAEYEOL SONG ,  JEONGHYUK YIM ,  HyungSuk JUNG

IPC: H01L29/423 ,  H01L21/28 ,  H01L29/51 ,  H01L27/088

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a gate electrode on a substrate, an upper capping pattern on the gate electrode, and a lower capping pattern between the gate electrode and the upper capping pattern. The lower capping pattern comprises a first portion between the gate electrode and the upper capping pattern, and a plurality of second portions extending from the first portion onto corresponding side surfaces of the upper capping pattern. The upper capping pattern covers a topmost surface of each of the second portions.

公开(公告)号：US20230361121A1

公开(公告)日：2023-11-09

申请号：US18353214

申请日：2023-07-17

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo LEE ,  Wonkeun CHUNG ,  Hoonjoo NA ,  Suyoung BAE ,  Jaeyeol SONG ,  Jonghan LEE ,  HyungSuk JUNG ,  Sangjin HYUN

IPC: H01L27/092 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423

CPC classification number: H01L27/0922 ,  H01L29/78696 ,  H01L21/823842 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/42392

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.

公开(公告)号：US20210358910A1

公开(公告)日：2021-11-18

申请号：US17384920

申请日：2021-07-26

Applicant: Samsung Electronics Co., Ltd.

Inventor： Dongsoo LEE ,  Wonkeun CHUNG ,  Hoonjoo NA ,  Suyoung BAE ,  Jaeyeol SONG ,  Jonghan LEE ,  HyungSuk JUNG ,  Sangjin HYUN

IPC: H01L27/092 ,  H01L29/786 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/51 ,  H01L29/423

Abstract: Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device comprises a first transistor on a substrate, and a second transistor on the substrate. Each of the first and second transistors includes a plurality of semiconductor patterns vertically stacked on the substrate and vertically spaced apart from each other, and a gate dielectric pattern and a work function pattern filling a space between the semiconductor patterns. The work function pattern of the first transistor includes a first work function metal layer, the work function pattern of the second transistor includes the first work function metal layer and a second work function metal layer, the first work function metal layer of each of the first and second transistors has a work function greater than that of the second work function metal layer, and the first transistor has a threshold voltage less than that of the second transistor.