公开(公告)号：US20220085025A1

公开(公告)日：2022-03-17

申请号：US17225601

申请日：2021-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunseok LIM ,  Minhyuk CHO ,  Kyung-Eun BYUN ,  Hyeonjin SHIN ,  Kaoru YAMAMOTO ,  Jungsoo YOON ,  Soyoung LEE ,  Geuno JEONG

IPC: H01L27/108

Abstract: A wiring structure includes a first conductive pattern including doped polysilicon on a substrate, an ohmic contact pattern including a metal silicide on the first conductive pattern, an oxidation prevention pattern including a metal silicon nitride on the ohmic contact pattern, a diffusion barrier including graphene on the oxidation prevention pattern, and a second conductive pattern including a metal on the diffusion barrier.

公开(公告)号：US20200286732A1

公开(公告)日：2020-09-10

申请号：US16807702

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Janghee LEE ,  Seunggeol NAM ,  Hyeonjin SHIN ,  Hyunseok LIM ,  Alum JUNG ,  Kyung-Eun BYUN ,  Jeonil LEE ,  Yeonchoo CHO

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

Abstract: Provided are a method of pre-treating a substrate and a method of directly forming graphene by using the method of pre-treating the substrate. In the method of pre-treating the substrate in the method of directly forming graphene, according to an embodiment, the substrate is pre-treated by using a pre-treatment gas including at least a carbon source and hydrogen. The method of directly forming graphene includes a process of pre-treating a substrate and a process of directly growing graphene on the substrate that is pre-treated. The process of pre-treating the substrate is performed according to the method of pre-treating the substrate.

公开(公告)号：US20220316052A1

公开(公告)日：2022-10-06

申请号：US17711147

申请日：2022-04-01

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sangwon KIM ,  Kyung-Eun BYUN ,  Yeonchoo CHO ,  Keunwook SHIN ,  Eunkyu LEE ,  Changseok LEE ,  Hyunjae SONG ,  Hyeonjin SHIN ,  Jungsoo YOON ,  Soyoung LEE ,  Hyunseok LIM

IPC: C23C16/26 ,  H01L29/45 ,  H01L21/285 ,  C23C16/511 ,  C23C16/505 ,  C23C16/02

Abstract: Provided are nanocrystalline graphene and a method of forming the same. The nanocrystalline graphene may include a plurality of grains formed by stacking a plurality of graphene sheets and has a grain density of about 500 ea/μm2 or higher and a root-mean-square (RMS) roughness in a range of about 0.1 or more to about 1.0 or less. When the nanocrystalline graphene has a grain density and a RMS roughness with these ranges, nanocrystalline graphene capable of covering the entirety of a large area on a substrate as a thin layer may be provided.