公开(公告)号：US20250054916A1

公开(公告)日：2025-02-13

申请号：US18931874

申请日：2024-10-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jimin CHOI ,  Jeonil LEE ,  Jongmin LEE ,  Juik LEE

IPC: H01L25/065 ,  H01L23/367 ,  H01L23/42 ,  H01L23/48

Abstract: A thermal pad of a semiconductor chip, a semiconductor chip including the thermal pad, and a method of manufacturing the semiconductor chip, the thermal pad including a thermal core in a trench at a lower surface of a semiconductor substrate, the thermal core being configured to receive heat generated from a through silicon via (TSV) vertically extending through the semiconductor substrate; a thermal head connected to the thermal core and protruding from the lower surface of the semiconductor substrate, the thermal head being configured to dissipate the heat in the thermal core; a first insulation layer between an inner surface of the trench and the thermal core; and a second insulation layer between the first insulation layer and the thermal core.

公开(公告)号：US20230178634A1

公开(公告)日：2023-06-08

申请号：US18072784

申请日：2022-12-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonil LEE ,  Gyuhyun KIL ,  Doosan BACK ,  Chansic YOON ,  Junghoon HAN

IPC: H01L29/66 ,  H10B12/00 ,  H01L29/78 ,  H01L29/423

CPC classification number: H01L29/6656 ,  H01L27/10897 ,  H01L27/10894 ,  H01L29/7833 ,  H01L29/6659 ,  H01L29/42364 ,  H01L27/10814 ,  H01L27/10885 ,  H01L27/10823

Abstract: A semiconductor device includes a substrate, a gate dielectric layer on the substrate, the gate dielectric layer including a recess at a side surface thereof, a gate electrode structure on the gate dielectric layer, a gate capping layer on the gate electrode structure, and a spacer structure on the substrate and covering side surfaces of the gate dielectric layer, the gate electrode structure, and the gate capping layer, the spacer structure including a first spacer, a second spacer on the first spacer and covering the recess, and a third spacer on the second spacer, the second spacer and the third spacer including silicon nitride.

公开(公告)号：US20250089236A1

公开(公告)日：2025-03-13

申请号：US18954927

申请日：2024-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jeonil LEE ,  Youngjun KIM ,  Jinbum KIM

IPC: H10B12/00

Abstract: A semiconductor device including an active pattern; a gate structure connected to the active pattern; a bit line structure connected to the active pattern; a buried contact connected to the active pattern; a contact pattern covering the buried contact; a landing pad connected to the contact pattern; and a capacitor structure connected to the landing pad, wherein the buried contact includes a first growth portion and a second growth portion spaced apart from each other, and the landing pad includes an interposition portion between the first growth portion and the second growth portion.

公开(公告)号：US20230078980A1

公开(公告)日：2023-03-16

申请号：US17696989

申请日：2022-03-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jimin CHOI ,  Jeonil LEE ,  Jongmin LEE ,  Juik LEE

IPC: H01L25/065 ,  H01L23/367 ,  H01L23/42 ,  H01L23/48

Abstract: A thermal pad of a semiconductor chip, a semiconductor chip including the thermal pad, and a method of manufacturing the semiconductor chip, the thermal pad including a thermal core in a trench at a lower surface of a semiconductor substrate, the thermal core being configured to receive heat generated from a through silicon via (TSV) vertically extending through the semiconductor substrate; a thermal head connected to the thermal core and protruding from the lower surface of the semiconductor substrate, the thermal head being configured to dissipate the heat in the thermal core; a first insulation layer between an inner surface of the trench and the thermal core; and a second insulation layer between the first insulation layer and the thermal core.

公开(公告)号：US20250053322A1

公开(公告)日：2025-02-13

申请号：US18650412

申请日：2024-04-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonil LEE ,  Jinwoo HAN ,  Seryeun YANG

IPC: G06F3/06

Abstract: There is provided a memory device including a processing-in-memory (PIM) dynamic random access memory (DRAM) die(s) and PIM-high bandwidth memory (HBM) devices. The memory device includes a core peripheral circuit structure including a bank core circuit including a row decoder and a sense amplifier of each of a plurality of banks, and a cell array structure disposed on the core peripheral circuit structure. The bank core circuit includes a plurality of sub core circuits correspondingly connected to the plurality of sub cell blocks, respectively. Each of the plurality of sub core circuits includes a sense amplifier segmented to be connected to a corresponding sub cell block, and a processing element connected to the segmented sense amplifier and configured to perform a logical operation on an operand that is data loaded into the segmented sense amplifier.

公开(公告)号：US20230051597A1

公开(公告)日：2023-02-16

申请号：US17579919

申请日：2022-01-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonil LEE ,  Youngjun KIM ,  Jinbum KIM

IPC: H01L27/108

Abstract: A semiconductor device including an active pattern; a gate structure connected to the active pattern; a bit line structure connected to the active pattern; a buried contact connected to the active pattern; a contact pattern covering the buried contact; a landing pad connected to the contact pattern; and a capacitor structure connected to the landing pad, wherein the buried contact includes a first growth portion and a second growth portion spaced apart from each other, and the landing pad includes an interposition portion between the first growth portion and the second growth portion.

公开(公告)号：US20200286732A1

公开(公告)日：2020-09-10

申请号：US16807702

申请日：2020-03-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook SHIN ,  Janghee LEE ,  Seunggeol NAM ,  Hyeonjin SHIN ,  Hyunseok LIM ,  Alum JUNG ,  Kyung-Eun BYUN ,  Jeonil LEE ,  Yeonchoo CHO

IPC: H01L21/02 ,  C23C16/02 ,  C23C16/26

Abstract: Provided are a method of pre-treating a substrate and a method of directly forming graphene by using the method of pre-treating the substrate. In the method of pre-treating the substrate in the method of directly forming graphene, according to an embodiment, the substrate is pre-treated by using a pre-treatment gas including at least a carbon source and hydrogen. The method of directly forming graphene includes a process of pre-treating a substrate and a process of directly growing graphene on the substrate that is pre-treated. The process of pre-treating the substrate is performed according to the method of pre-treating the substrate.

公开(公告)号：US20240322048A1

公开(公告)日：2024-09-26

申请号：US18606081

申请日：2024-03-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyunghwan LEE ,  Jeonil LEE ,  Minhee CHO ,  Daweon HA

IPC: H01L29/792 ,  H10B12/00

CPC classification number: H01L29/7926 ,  H10B12/482 ,  H10B12/485 ,  H10B12/488

Abstract: Provided is an integrated circuit device including a source line extending in a first horizontal direction on a substrate, a channel layer extending in a vertical direction, disposed on the source line, and having a first sidewall and a second sidewall, a trapping layer on the first sidewall of the channel layer and including an oxide semiconductor, a word line on at least one sidewall of the trapping layer and extending in a second horizontal direction crossing the first horizontal direction, a gate insulation layer between the at least one sidewall of the trapping layer and the word line, and a bit line electrically connected to the channel layer and extending in the first horizontal direction, wherein the channel layer has a first bandgap energy, and the trapping layer has a second bandgap energy that is greater than the first bandgap energy.

公开(公告)号：US20230389290A1

公开(公告)日：2023-11-30

申请号：US18200135

申请日：2023-05-22

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jeonil LEE ,  Kyunghwan LEE ,  Min Hee CHO

IPC: H10B12/00 ,  H10B53/10 ,  H10B53/30 ,  H01L29/08

CPC classification number: H10B12/315 ,  H10B12/482 ,  H10B12/485 ,  H10B53/10 ,  H10B53/30 ,  H01L29/0847

Abstract: A semiconductor device includes a first single crystal semiconductor pattern including a first source/drain region, a second source/drain region, and a first vertical channel region between the first source/drain region and the second source/drain region, the second source/drain region being at a higher level than the first source/drain region; a first gate electrode facing a first side surface of the first single crystal semiconductor pattern; a first gate dielectric layer, the first gate dielectric layer including a portion between the first single crystal semiconductor pattern and the first gate electrode; and a complementary structure in contact with a second side surface of the first single crystal semiconductor pattern, wherein the complementary structure includes an oxide semiconductor layer.

公开(公告)号：US20230232612A1

公开(公告)日：2023-07-20

申请号：US18050179

申请日：2022-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Chanwoo Shin ,  Hyuckjin KANG ,  Donghwan LEE ,  Jeonil LEE ,  Minwu KIM ,  Jungwoo SONG

IPC: H01L29/94

CPC classification number: H01L27/10814 ,  H01L27/10885 ,  H01L27/10855

Abstract: A semiconductor device includes a bit line structure on a substrate, a lower contact plug on a portion of the substrate adjacent to the bit line structure, an upper contact plug including a first metal pattern on the lower contact plug and a second metal pattern contacting an upper surface and an upper sidewall of the first metal pattern, and a capacitor on the upper contact plug. The upper surface of the first metal pattern is above an upper surface of the bit line structure with respect to an upper surface of the substrate.