公开(公告)号：US12123789B2

公开(公告)日：2024-10-22

申请号：US17366348

申请日：2021-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungsu Kim ,  Yunhyeok Im ,  Inhwan Baek ,  Dongsuk Shin

IPC: G01K7/42 ,  G05D23/19 ,  G06F1/20 ,  G06F1/3206 ,  G06F1/3296 ,  G06F11/30 ,  G06F1/28 ,  G06F1/3237 ,  G06F1/324 ,  G06F123/02 ,  G06N20/00

CPC classification number: G01K7/425 ,  G01K7/42 ,  G05D23/19 ,  G06F1/206 ,  G06F1/3206 ,  G06F1/3296 ,  G06F11/3058 ,  G06F1/28 ,  G06F1/3237 ,  G06F1/324 ,  G06F11/3062 ,  G06F2123/02 ,  G06N20/00 ,  Y02D10/00

Abstract: The present disclosure provides a device and methods to control a temperature of an integrated circuit (IC). For example, a device may include a circuit (e.g., an IC), a power monitor, a temperature sensor, and a controller. In some examples, temperature may be estimated based on power measured by a dynamic power monitor (DPM). In some cases, the estimated temperatures may be corrected based on temperature sensed by a temperature sensor on the IC. The power may be measured in shorter time periods and/or more frequent time periods compared to a time periods that the temperature sensor senses temperature. Accordingly, the temperature of an IC may be detected and adjusted more frequently based on the power measurements, and the temperature estimates may be adjusted for accuracy based on sensed temperatures.

公开(公告)号：US20230380164A1

公开(公告)日：2023-11-23

申请号：US18116434

申请日：2023-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyeonghoon Park ,  Inhwan Baek ,  Jaebok Baek ,  Jeehoon Han ,  Seungyoon Kim ,  Heesuk Kim ,  Byoungjae Park ,  Jongseon Ahn ,  Jumi Yun

IPC: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

CPC classification number: H10B43/27 ,  H10B41/27 ,  H10B41/41 ,  H10B43/40

Abstract: A semiconductor memory device includes: a first semiconductor structure including a first substrate, circuit devices on the first substrate, and a lower interconnection structure connected to the circuit devices; and a second semiconductor structure on the first semiconductor structure. The second semiconductor structure may include: a second substrate having a first region and a second region; a substrate insulating layer extending through the second substrate; a landing pad extending through the substrate insulating layer; gate electrodes, each having a gate pad region on the second region having an exposed upper surface; and a gate contact plug extending through the gate pad region of at least one of the gate electrodes and into the landing pad. The landing pad may include a pad portion that is surrounded by an internal side surface of the substrate insulating layer, and a via portion extending from the pad portion to the lower interconnection structure.

公开(公告)号：US20220136909A1

公开(公告)日：2022-05-05

申请号：US17366348

申请日：2021-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Byungsu Kim ,  Yunhyeok Im ,  Inhwan Baek ,  Dongsuk Shin

IPC: G01K7/42 ,  G06F1/20 ,  G06F1/3206 ,  G06F1/3296

Abstract: The present disclosure provides a device and methods to control a temperature of an integrated circuit (IC). For example, a device may include a circuit (e.g., an IC), a power monitor, a temperature sensor, and a controller. In some examples, temperature may be estimated based on power measured by a dynamic power monitor (DPM). In some cases, the estimated temperatures may be corrected based on temperature sensed by a temperature sensor on the IC. The power may be measured in shorter time periods and/or more frequent time periods compared to a time periods that the temperature sensor senses temperature. Accordingly, the temperature of an IC may be detected and adjusted more frequently based on the power measurements, and the temperature estimates may be adjusted for accuracy based on sensed temperatures.