公开(公告)号：US20160351408A1

公开(公告)日：2016-12-01

申请号：US15130515

申请日：2016-04-15

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： BADRO IM ,  YOONCHUL CHO ,  SANGYEOL KANG ,  DAEHYUN KIM ,  DONGKAK LEE ,  JUN-NOH LEE ,  BONGHYUN KIM ,  KONGSOO LEE

IPC: H01L21/308 ,  H01L21/306 ,  H01L21/3065

CPC classification number: H01L21/0337 ,  H01L21/02112 ,  H01L21/02129 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3086 ,  H01L21/3105 ,  H01L21/31058 ,  H01L21/31122 ,  H01L21/31138 ,  H01L21/31144 ,  H01L21/32055 ,  H01L21/32139

Abstract: Carbon-containing patterns are formed on an etch target layer, side surfaces of the carbon-containing patterns are treated by a hydrophilic process, poly-crystalline silicon spacers are formed on the side surfaces of the carbon-containing patterns after the hydrophilic process has been performed, and the etch target layer is patterned using the poly-crystalline silicon spacers as an etch mask.

Abstract translation: 在蚀刻目标层上形成含碳图案，通过亲水处理处理含碳图案的侧表面，亲水处理已经在含碳图案的侧表面上形成多晶硅间隔物 并且使用多晶硅间隔物作为蚀刻掩模来图案化蚀刻目标层。

公开(公告)号：US20190148383A1

公开(公告)日：2019-05-16

申请号：US16245307

申请日：2019-01-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jinwon MA ,  JUN-NOH LEE ,  DONG-HYUN IM ,  YOUNGSEOK KIM ,  KONGSOO LEE

IPC: H01L27/108 ,  H01L21/768

CPC classification number: H01L27/10888 ,  H01L21/76805 ,  H01L21/76883 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/53271 ,  H01L27/10811 ,  H01L27/10855 ,  H01L27/10885

Abstract: A method of fabricating a semiconductor device includes forming an interlayer insulating structure on a substrate, forming a contact hole that penetrates the interlayer insulating structure to expose the substrate, forming an amorphous silicon layer including a first portion and a second portion, the first portion covering a top surface of the substrate exposed by the contact hole, the second portion covering a sidewall of the contact hole, providing hydrogen atoms into the amorphous silicon layer, and crystallizing the first portion using the substrate as a seed.