公开(公告)号：US20160358660A1

公开(公告)日：2016-12-08

申请号：US15238740

申请日：2016-08-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-WAN NAM ,  WON-TAECK JUNG ,  JUNGHOON PARK

IPC: G11C16/14 ,  G11C16/08 ,  G11C16/04

CPC classification number: G11C16/14 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/344 ,  G11C16/3445 ,  H01L27/115

Abstract: An erase method of a nonvolatile memory includes supplying an erase voltage to a substrate, supplying a selection word line voltage to word lines connected with a selected sub-block within a memory block of the nonvolatile memory, supplying a non-selection word line voltage to word lines connected with an unselected sub-block within the memory block during a first delay time from a point of time when the erase voltage is supplied, and thereafter floating the word lines connected with the unselected sub-block.

公开(公告)号：US20150029790A1

公开(公告)日：2015-01-29

申请号：US14485049

申请日：2014-09-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-WAN NAM ,  WON-TEACK JUNG ,  JUNGHOON PARK

IPC: G11C16/14 ,  G11C16/04 ,  G11C16/08

CPC classification number: G11C16/14 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/344 ,  G11C16/3445 ,  H01L27/115

Abstract: An erase method of a nonvolatile memory includes supplying an erase voltage to a substrate, supplying a selection word line voltage to word lines connected with a selected sub-block within a memory block of the nonvolatile memory, supplying a non-selection word line voltage to word lines connected with an unselected sub-block within the memory block during a first delay time from a point of time when the erase voltage is supplied, and thereafter floating the word lines connected with the unselected sub-block.

公开(公告)号：US20160148698A1

公开(公告)日：2016-05-26

申请号：US15009856

申请日：2016-01-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-WAN NAM ,  WON-TAECK JUNG ,  JUNGHOON PARK

IPC: G11C16/14 ,  G11C16/08 ,  G11C16/04

CPC classification number: G11C16/14 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/344 ,  G11C16/3445 ,  H01L27/115

Abstract: An erase method of a nonvolatile memory includes supplying an erase voltage to a substrate, supplying a selection word line voltage to word lines connected with a selected sub-block within a memory block of the nonvolatile memory, supplying a non-selection word line voltage to word lines connected with an unselected sub-block within the memory block during a first delay time from a point of time when the erase voltage is supplied, and thereafter floating the word lines connected with the unselected sub-block.

公开(公告)号：US20150310923A1

公开(公告)日：2015-10-29

申请号：US14790572

申请日：2015-07-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： SANG-WAN NAM ,  KANG-BIN LEE ,  JUNGHOON PARK

IPC: G11C16/26 ,  G11C16/12 ,  G11C16/04 ,  G11C16/34

CPC classification number: G11C16/26 ,  G11C16/0483 ,  G11C16/12 ,  G11C16/16 ,  G11C16/34 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

Abstract: An operating method of a nonvolatile memory, which includes a plurality of cell strings, each cell string having a plurality of memory cells and a string selection transistor stacked on a substrate, includes detecting threshold voltages of the string selection transistors of the plurality of cell strings; adjusting voltages to be supplied to the string selection transistors according to the detected threshold voltages; and applying the adjusted voltages to the string selection transistors to select or unselect the plurality of cell strings during a programming operation.

Abstract translation: 一种非易失性存储器的操作方法，包括多个单元串，具有多个存储单元的每个单元串和堆叠在基板上的串选择晶体管，包括检测多个单元串中的串选择晶体管的阈值电压 ; 根据检测到的阈值电压调整提供给串选择晶体管的电压; 以及将调整后的电压施加到串选择晶体管，以在编程操作期间选择或取消选择多个单元串。

公开(公告)号：US20150187425A1

公开(公告)日：2015-07-02

申请号：US14644247

申请日：2015-03-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： SANG-WAN NAM ,  WON-TAECK JUNG ,  JUNGHOON PARK

IPC: G11C16/14 ,  G11C16/04

CPC classification number: G11C16/14 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/344 ,  G11C16/3445 ,  H01L27/115

Abstract: An erase method of a nonvolatile memory includes supplying an erase voltage to a substrate, supplying a selection word line voltage to word lines connected with a selected sub-block within a memory block of the nonvolatile memory, supplying a non-selection word line voltage to word lines connected with an unselected sub-block within the memory block during a first delay time from a point of time when the erase voltage is supplied, and thereafter floating the word lines connected with the unselected sub-block.

Abstract translation: 非易失性存储器的擦除方法包括向衬底提供擦除电压，将选择字线电压提供给与非易失性存储器的存储块内的选定子块相连的字线，将非选择字线电压提供给 在从提供擦除电压的时间点起的第一延迟时间期间，与存储器块内的未选择子块相连的字线，然后浮动与未选择的子块相连的字线。