公开(公告)号：US12219721B2

公开(公告)日：2025-02-04

申请号：US18529889

申请日：2023-12-05

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yusuf Cinar ,  Jae Hong Park ,  Han Hong Lee ,  Seon Gyun Baek ,  Won-Gi Hong

IPC: H05K5/02 ,  H01R12/70 ,  H01R12/72 ,  H01R12/73 ,  H01R13/621 ,  H05K5/00 ,  H05K7/20 ,  H01L25/18 ,  H05K1/11 ,  H05K1/18

Abstract: A memory device and an electronic device is provided. The memory device may include a memory module including a module board and a memory connector located on one side of the module board, a first enclosure placed above the memory module and a second enclosure placed below the memory module, wherein the first enclosure includes a first main cover which covers upper faces of the module board and the memory connector, at least one clamping hole which penetrates the main cover at a position overlapping the memory connector, an inter-device fastening pillar protruding downward from a lower face of the first main cover, and a coupling hole which is located inside the inter-device fastening pillar on a plane and penetrates the inter-device fastening pillar and the main cover.

公开(公告)号：US12010832B2

公开(公告)日：2024-06-11

申请号：US17461051

申请日：2021-08-30

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae Hong Park ,  Jae-Wha Park ,  Moon Keun Kim ,  Jung Ha Hwang

IPC: H10B12/00 ,  G11C5/06

CPC classification number: H10B12/50 ,  H10B12/33 ,  G11C5/063

Abstract: A semiconductor memory device may include at least one semiconductor pattern including a horizontal portion extending in a second direction parallel to a top surface of a semiconductor substrate and a vertical portion extending in the first direction, at least one gate electrode on the horizontal portion of the at least one semiconductor pattern and extending in a third direction different from the first direction and the second direction, and at least one information storage element connected to the vertical portion of the at least one semiconductor pattern, wherein a thickness of the horizontal portion of the at least one semiconductor pattern in the first direction is smaller than a thickness of the vertical portion of the at least one semiconductor pattern in the first direction.

公开(公告)号：USD988318S1

公开(公告)日：2023-06-06

申请号：US29805535

申请日：2021-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Yusuf Cinar ,  Jae Hong Park ,  Han Hong Lee ,  Seon Gyun Baek ,  Won-Gi Hong

Abstract: FIG. 1 is a front perspective view of a solid state drive memory device showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof; and,
FIG. 8 is another perspective view thereof.
The evenly dashed broken lines in the figures depict portions of the solid state drive memory device that form no part of the claimed design.

公开(公告)号：US11877410B2

公开(公告)日：2024-01-16

申请号：US17217759

申请日：2021-03-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yusuf Cinar ,  Jae Hong Park ,  Han Hong Lee ,  Seon Gyun Baek ,  Won-Gi Hong

IPC: H05K5/02 ,  H01R12/70 ,  H01R12/72 ,  H01R12/73 ,  H01R13/621 ,  H05K5/00 ,  H05K7/20 ,  H01L25/18 ,  H05K1/11 ,  H05K1/18

CPC classification number: H05K5/0217 ,  H01R12/7023 ,  H01R12/721 ,  H01R12/73 ,  H01R13/621 ,  H05K5/0008 ,  H05K5/026 ,  H05K7/20409 ,  H01L25/18 ,  H05K1/117 ,  H05K1/181 ,  H05K7/20445 ,  H05K2201/09063 ,  H05K2201/10159

Abstract: A memory device and an electronic device is provided. The memory device may include a memory module including a module board and a memory connector located on one side of the module board, a first enclosure placed above the memory module and a second enclosure placed below the memory module, wherein the first enclosure includes a first main cover which covers upper faces of the module board and the memory connector, at least one clamping hole which penetrates the main cover at a position overlapping the memory connector, an inter-device fastening pillar protruding downward from a lower face of the first main cover, and a coupling hole which is located inside the inter-device fastening pillar on a plane and penetrates the inter-device fastening pillar and the main cover.

公开(公告)号：USD997939S1

公开(公告)日：2023-09-05

申请号：US29805536

申请日：2021-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Yusuf Cinar ,  Jae Hong Park ,  Han Hong Lee ,  Seon Gyun Baek ,  Won-Gi Hong

Abstract: FIG. 1 is a front perspective view of a solid state drive memory device showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a left-side view thereof; and,
FIG. 4 is a top plan view thereof.
The evenly dashed broken lines in the figures depict portions of the solid state drive memory device that form no part of the claimed design.

公开(公告)号：US20190027376A1

公开(公告)日：2019-01-24

申请号：US15862541

申请日：2018-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JUN HO YOON ,  Jae Hong Park ,  DA IL EOM ,  Sung Yeon Kim ,  Jin Young Park ,  Yong Moon Jang

IPC: H01L21/3213 ,  H01L27/108 ,  H01L21/311 ,  G03F1/00 ,  H01L21/308 ,  H01L21/304

Abstract: A method for fabricating a semiconductor device includes forming an insulating layer on a substrate; forming a first mask pattern including silicon on the insulating layer and forming a second mask pattern including an oxide on the first mask pattern; forming a coating layer that includes carbon and which covers an upper surface of the insulating layer, a sidewall of the first mask pattern, and the second mask pattern; removing a portion of the coating layer and the second mask pattern; forming a metal layer on an upper surface of the first mask pattern and on a sidewall of the coating layer; exposing the upper surface of the insulating layer by removing the coating layer; and etching the insulating layer by using the first mask pattern and the metal layer as a mask.

公开(公告)号：US20170293585A1

公开(公告)日：2017-10-12

申请号：US15334874

申请日：2016-10-26

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Han Hong Lee ,  Jae Hong Park ,  Jung Hyun Woo ,  Sung Woo Joo ,  Chang Hoon Han

IPC: G06F13/40 ,  G06F13/42 ,  G11C5/02 ,  G06F13/36

CPC classification number: G06F13/4068 ,  G06F13/36 ,  G06F13/4027 ,  G06F13/4282 ,  G06F2213/0032 ,  G06F2213/0042 ,  G11C5/025 ,  G11C5/04 ,  H01R12/716 ,  H04L69/08

Abstract: A bridge hoard includes a printed circuit board (PCB) and a protocol converter mounted on the PCB to perform a conversion operation converting between a first communication protocol and a second communication protocol different from the first communication protocol. The bridge board further includes a first connector configured to communicate according to the first communication protocol and a second connector configured to communicate according to the second communication protocol. The bridge board additionally includes a hole formed in the PCB. The PCB is shaped as a concave polygon. The concave polygon includes a first region and a second region. The first region includes a first edge and a second edge, which extends in parallel to the first edge, along a first direction. The second region includes a third edge and a fourth edge, which extends in parallel to the third edge, along a second direction perpendicular to the first direction.

公开(公告)号：USD998612S1

公开(公告)日：2023-09-12

申请号：US29805549

申请日：2021-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Yusuf Cinar ,  Jae Hong Park ,  Han Hong Lee ,  Seon Gyun Baek ,  Won-Gi Hong

Abstract: FIG. 1 is a front perspective view of a solid state drive memory device showing my new design;
FIG. 2 is a front view thereof; and,
FIG. 3 is a top plan view thereof.
The evenly dashed broken lines in the figures depict portions of the solid state drive memory device that form no part of the claimed design.

公开(公告)号：USD997161S1

公开(公告)日：2023-08-29

申请号：US29805545

申请日：2021-08-27

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Yusuf Cinar ,  Jae Hong Park ,  Han Hong Lee ,  Seon Gyun Baek ,  Won-Gi Hong

Abstract: FIG. 1 is a front perspective view of a solid state drive memory device showing my new design;
FIG. 2 is a front view thereof; and,
FIG. 3 is a top plan view thereof.
The evenly dashed broken lines in the figures depict portions of the solid state drive memory device that form no part of the claimed design.

公开(公告)号：USD986900S1

公开(公告)日：2023-05-23

申请号：US29805770

申请日：2021-08-30

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Designer： Yusuf Cinar ,  Jae Hong Park ,  Han Hong Lee ,  Seon Gyun Baek ,  Won-Gi Hong

Abstract: FIG. 1 is a front perspective view of a solid state drive memory device showing our new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left-side view thereof;
FIG. 5 is a right-side view thereof;
FIG. 6 is a top plan view thereof;
FIG. 7 is a bottom plan view thereof; and,
FIG. 8 is a bottom perspective view thereof.
The evenly dashed broken lines in the figures depict portions of the solid state drive memory device that form no part of the claimed design.