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    STAND AND DISPLAY APPARATUS INCLUDING THE SAME
    4.
    发明申请
    STAND AND DISPLAY APPARATUS INCLUDING THE SAME 有权

    公开(公告)号：US20220120330A1

    公开(公告)日：2022-04-21

    申请号：US17419121

    申请日：2019-03-21

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Hyun Young CHOI ,  Ji Su KIM ,  Dae Sik YOON ,  Woo Sung IN ,  Hyun Jun JUNG ,  Dae Su CHOI

    IPC: F16F15/04 ,  F16M11/22

    Abstract: The present disclosure relates to a stand having an improved structure to stably support a display module, and a display apparatus including the same. The stand is configured to support a display module. The stand includes a base assembly including a first base and a second base coupled to the first base, a support bar extending in a height direction of the stand to be coupled to the base assembly, a first vibration damper installed on the first base, the first vibration damper including a moving member exposed to the outside of the first base and provided to move in the height direction of the stand, and a second vibration damper installed on the second base, the second vibration damper including a rotation member provided to exposed to the outside of the second base and move in the height direction of the stand and rotatably provided to impart mobility to the stand.

    NON-VOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND STORAGE DEVICE HAVING THE SAME
    5.
    发明申请
    NON-VOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND STORAGE DEVICE HAVING THE SAME 有权

    公开(公告)号：US20220172786A1

    公开(公告)日：2022-06-02

    申请号：US17675085

    申请日：2022-02-18

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong Jin SHIN ,  Ji Su KIM ,  Dae Seok BYEON ,  Ji Sang LEE ,  Jun Jin KONG ,  Eun Chu OH

    IPC: G11C16/26 ,  G11C16/10 ,  G11C5/14 ,  G11C16/08 ,  G11C16/32 ,  G11C11/56 ,  G11C16/24

    Abstract: A storage device including, a plurality of non-volatile memories configured to include a memory cell region including at least one first metal pad; and a peripheral circuit region including at least one second metal pad and vertically connected to the memory cell region by the at least one first metal pad and the at least one second metal pad, and a controller connected to the plurality of non-volatile memories through a plurality of channels and configured to control the plurality of non-volatile memories, wherein the controller selects one of a first read operation mode and a second read operation mode and transfers a read command corresponding to the selected read operation mode to the plurality of non-volatile memories, wherein one sensing operation is performed to identify one program state among program sates in the first read operation mode, and wherein at least two sensing operations are performed to identify the one program state among the program states in the second read operation mode.

    NON-VOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND STORAGE DEVICE HAVING THE SAME
    6.
    发明申请
    NON-VOLATILE MEMORY DEVICE, OPERATING METHOD THEREOF, AND STORAGE DEVICE HAVING THE SAME 有权

    公开(公告)号：US20210005271A1

    公开(公告)日：2021-01-07

    申请号：US17029265

    申请日：2020-09-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Dong Jin SHIN ,  Ji Su KIM ,  Dae Seok BYEON ,  Ji Sang LEE ,  Jun Jin KONG ,  Eun Chu OH

    IPC: G11C16/26 ,  G11C16/10 ,  G11C5/14 ,  G11C16/24 ,  G11C16/08 ,  G11C16/32 ,  G11C11/56

    Abstract: A storage device including, a plurality of non-volatile memories configured to include a memory cell region including at least one first metal pad; and a peripheral circuit region including at least one second metal pad and vertically connected to the memory cell region by the at least one first metal pad and the at least one second metal pad, and a controller connected to the plurality of non-volatile memories through a plurality of channels and configured to control the plurality of non-volatile memories, wherein the controller selects one of a first read operation mode and a second read operation mode and transfers a read command corresponding to the selected read operation mode to the plurality of non-volatile memories, wherein one sensing operation is performed to identify one program state among program sates in the first read operation mode, and wherein at least two sensing operations are performed to identify the one program state among the program states in the second read operation mode.

    IMAGE SENSOR AND AN IMAGE SENSING SYSTEM INCLUDING THE SAME
    8.
    发明申请
    IMAGE SENSOR AND AN IMAGE SENSING SYSTEM INCLUDING THE SAME 有权

    公开(公告)号：US20220149091A1

    公开(公告)日：2022-05-12

    申请号：US17491905

    申请日：2021-10-01

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： In Sung JOE ,  Min Kyung KIM ,  Min Kwan KIM ,  Ji Su KIM ,  Tae Hoon KIM

    IPC: H01L27/146 ,  H04N9/04 ,  H04N5/369

    Abstract: Provided is an image sensor including a substrate, an element separation film provided on the substrate and having a mesh shape, a plurality of pixel regions formed by the element separation film, the plurality of pixel regions including a first pixel region and a second pixel region that is adjacent to the first pixel region, the element separation film being interposed between the first pixel region and the second pixel region, a first lens provided to extend along the first pixel region and the second pixel region, a first color filter configured to transmit light focused by the first lens to the first pixel region and the second pixel region, and a color filter grid forming a region in which the first color filter is provided, and at least partially overlapping the first pixel region and the second pixel region in a vertical direction.

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