Abstract:
Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.
Abstract:
A plasma monitoring device includes a fixing unit, a plasma measuring unit disposed to be in contact with the fixing unit, and measuring a luminous intensity of emitted light of a plasma to output a luminous intensity measurement value, a reference light source unit irradiating reference light having a uniform luminous intensity to the plasma measuring unit, and a control unit receiving the luminous intensity measurement value to calculate a luminous intensity value of the emitted light, controlling a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light, comparing a luminous intensity of the reference light irradiated to the plasma measuring unit with a previously stored luminous intensity reference value to detect a correction factor, and applying the correction factor to a luminous intensity value of the emitted light to correct the luminous intensity measurement value.
Abstract:
A plasma monitoring device includes a fixing unit, a plasma measuring unit disposed to be in contact with the fixing unit, and measuring a luminous intensity of emitted light of a plasma to output a luminous intensity measurement value, a reference light source unit irradiating reference light having a uniform luminous intensity to the plasma measuring unit, and a control unit receiving the luminous intensity measurement value to calculate a luminous intensity value of the emitted light, controlling a voltage applied to the reference light source unit to uniformly control a luminous intensity of the reference light, comparing a luminous intensity of the reference light irradiated to the plasma measuring unit with a previously stored luminous intensity reference value to detect a correction factor, and applying the correction factor to a luminous intensity value of the emitted light to correct the luminous intensity measurement value.
Abstract:
A light emitting diode (LED) package may include a package body provided with a pair of lead frames, and an LED chip mounted on the package body and electrically connected to the lead frames through wire bonding. Each lead frame may include a first reflective layer disposed on a mounting surface on which the LED chip is disposed and a second reflective layer disposed on the first reflective layer. A wire may penetrate through the second reflective layer to be connected to the first reflective layer. Accordingly, the LED package may provide the uniform amount of light by suppressing discoloration of the lead frames, and the manufacturing time of the LED package may be reduced, leading to a reduction in manufacturing costs.
Abstract:
Provided are a monitoring device and method. A monitoring device includes a laser processor configured to emit a processing laser beam to perform a melting annealing process on a wafer; a laser monitor configured to emit a monitoring laser beam onto the wafer while the laser processor performs the melting annealing process, the laser monitor configured to measure reflectivity of the wafer; and a data processor configured to process data on the reflectivity measured by the laser monitor, and monitor one or more characteristics of the wafer based on the data on the reflectivity.
Abstract:
A light emitting diode (LED) package may include a package body provided with a pair of lead frames, and an LED chip mounted on the package body and electrically connected to the lead frames through wire bonding. Each lead frame may include a first reflective layer disposed on a mounting surface on which the LED chip is disposed and a second reflective layer disposed on the first reflective layer. A wire may penetrate through the second reflective layer to be connected to the first reflective layer. Accordingly, the LED package may provide the uniform amount of light by suppressing discoloration of the lead frames, and the manufacturing time of the LED package may be reduced, leading to a reduction in manufacturing costs.