公开(公告)号：US20140367774A1

公开(公告)日：2014-12-18

申请号：US14294412

申请日：2014-06-03

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jong-Ryeol Yoo ,  Jun-Noh Lee ,  Dong-Chan Kim ,  Han-Jin Lim

IPC: H01L29/423 ,  H01L29/49

CPC classification number: H01L29/4236 ,  H01L27/10876 ,  H01L29/4966 ,  H01L29/4983

Abstract: Semiconductor devices are provided including a first trench in a semiconductor substrate; a first insulating film in the first trench; a first conductive film on the first insulating film, the first conductive film having upper and lower portions and filling at least a portion of the first trench; and a first work function adjustment film having first and second portions, a first lower work function adjustment film portion and a first upper work function adjustment portion. The first lower work function adjustment film portion overlaps the lower portion of the first conductive film and the first upper work function adjustment film portion overlaps the upper portion of the first conductive film between the first insulating film and the first conductive film.

Abstract translation: 提供半导体器件，其包括半导体衬底中的第一沟槽; 第一沟槽中的第一绝缘膜; 在所述第一绝缘膜上的第一导电膜，所述第一导电膜具有上部和下部并填充所述第一沟槽的至少一部分; 以及具有第一和第二部分的第一功能调整膜，第一下部功能调整膜部分和第一上部功能调整部分。 第一下功函数调整膜部与第一导电膜的下部重叠，第一上功函调整膜部与第一绝缘膜与第一导电膜之间的第一导电膜的上部重叠。

公开(公告)号：US10319858B2

公开(公告)日：2019-06-11

申请号：US16128152

申请日：2018-09-11

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

IPC: H01L21/84 ,  H01L27/12 ,  H01L29/66 ,  H01L29/78

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

公开(公告)号：US20190252540A1

公开(公告)日：2019-08-15

申请号：US16394671

申请日：2019-04-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Sung-Min Kim ,  Kyung-Seok Oh ,  Cheol Kim ,  Heon-Jong Shin ,  Jong-Ryeol Yoo ,  Hyun-Jung Lee ,  Seong-Hoon Jeong

IPC: H01L29/78 ,  H01L27/12 ,  H01L29/423 ,  H01L21/84 ,  H01L29/66

CPC classification number: H01L29/785 ,  H01L21/845 ,  H01L27/1211 ,  H01L29/42392 ,  H01L29/66795

Abstract: Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.