公开(公告)号：US20150060874A1

公开(公告)日：2015-03-05

申请号：US14198748

申请日：2014-03-06

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-hee CHOI ,  Yun-seong LEE

IPC: H01L29/20 ,  H01L21/02

CPC classification number: H01L33/24 ,  H01L33/0079 ,  H01L33/44 ,  H01L33/54 ,  H01S5/0206

Abstract: A flexible electric device includes a first electrode on a flexible member, at least one semiconductor element on the first electrode, at least one filling region adjacent to the semiconductor element and a second electrode on the semiconductor element.

Abstract translation: 柔性电气装置包括柔性构件上的第一电极，第一电极上的至少一个半导体元件，与半导体元件相邻的至少一个填充区域和半导体元件上的第二电极。

公开(公告)号：US20150014630A1

公开(公告)日：2015-01-15

申请号：US14188862

申请日：2014-02-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jun-hee CHOI ,  Won-jong YOO ,  Seung-hwan LEE ,  Min-sup CHOI ,  Xiao Chi LIU ,  Ji-a LEE

IPC: H01L29/775 ,  H01L29/16 ,  H01L29/66

CPC classification number: H01L29/1606 ,  H01L29/6603 ,  H01L29/7311 ,  H01L29/7376 ,  H01L29/88

Abstract: A tunneling device may include a tunnel barrier layer, a first material layer including a first conductivity type two-dimensional material on a first surface of the tunnel barrier layer and a second material layer including a second conductivity type two-dimensional material on a second surface of the tunnel barrier layer. The tunneling device may use a tunneling current through the tunnel barrier layer between the first material layer and the second material layer.

Abstract translation: 隧道装置可以包括隧道势垒层，在隧道势垒层的第一表面上包括第一导电类型二维材料的第一材料层和在第二表面上包括第二导电类型二维材料的第二材料层 的隧道势垒层。 隧穿装置可以使用通过第一材料层和第二材料层之间的隧道势垒层的隧穿电流。

公开(公告)号：US20140162406A1

公开(公告)日：2014-06-12

申请号：US13919460

申请日：2013-06-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Eun-hyoung CHO ,  Jun-hee CHOI ,  Jin-seung SOHN

IPC: H01L21/56 ,  H01L29/40

CPC classification number: H01L21/568 ,  H01L21/6835 ,  H01L2221/6835 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Provided is a method of transferring semiconductor elements formed on a non-flexible substrate to a flexible substrate. Also, provided is a method of manufacturing a flexible semiconductor device based on the method of transferring semiconductor elements. A semiconductor element grown or formed on the substrate may be efficiently transferred to the resin layer while maintaining an arrangement of the semiconductor elements. Furthermore, the resin layer acts as a flexible substrate supporting the vertical semiconductor elements.

Abstract translation: 提供了将形成在非柔性基板上的半导体元件转移到柔性基板的方法。 此外，提供了一种基于半导体元件的传输方法制造柔性半导体器件的方法。 在保持半导体元件的配置的同时，可以在衬底上生长或形成的半导体元件被有效地转移到树脂层。 此外，树脂层用作支撑垂直半导体元件的柔性基板。

公开(公告)号：US20140054599A1

公开(公告)日：2014-02-27

申请号：US13937729

申请日：2013-07-09

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jun-hee CHOI ,  Byoung-lyong CHOI ,  Tae-ho KIM

IPC: H01L31/0304 ,  H01L33/00 ,  H01L31/18 ,  H01L33/32

CPC classification number: H01L31/03044 ,  B82Y20/00 ,  H01L25/0753 ,  H01L31/035218 ,  H01L31/035236 ,  H01L31/03529 ,  H01L31/047 ,  H01L31/1848 ,  H01L31/1856 ,  H01L31/1892 ,  H01L33/0075 ,  H01L33/0079 ,  H01L33/24 ,  H01L33/32 ,  H01L33/56 ,  H01L2924/0002 ,  Y02E10/544 ,  Y02P70/521 ,  H01L2924/00

Abstract: A flexible semiconductor device and a method of manufacturing the flexible semiconductor device are provided. The flexible semiconductor device may include at least one vertical semiconductor element that is at least partly embedded in a flexible material layer. The flexible semiconductor device may further include a first electrode formed on a first surface of the flexible material layer and a second electrode formed on a second surface of the flexible material layer. A method of manufacturing a flexible semiconductor device may include separating a flexible material layer, in which the at least one vertical semiconductor element is embedded, from a substrate by weakening or degrading an adhesive force between an underlayer and a buffer layer by using a difference in coefficients of thermal expansion of the underlayer and the buffer layer.

Abstract translation: 提供了柔性半导体器件和制造柔性半导体器件的方法。 柔性半导体器件可以包括至少部分地嵌入柔性材料层中的至少一个垂直半导体元件。 柔性半导体器件还可以包括形成在柔性材料层的第一表面上的第一电极和形成在柔性材料层的第二表面上的第二电极。 制造柔性半导体器件的方法可以包括通过使用下层和缓冲层之间的差异来弱化或降低底层和缓冲层之间的粘合力来将其中嵌入至少一个垂直半导体元件的柔性材料层从衬底分离 底层和缓冲层的热膨胀系数。