公开(公告)号：US20200071822A1

公开(公告)日：2020-03-05

申请号：US16371327

申请日：2019-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Joo An ,  Jeon-Il Lee ,  Kaoru Yamamoto ,  Jang-Hee Lee ,  Kee-Young Jun ,  Geun-O Jeong

IPC: C23C16/455 ,  H01L21/67 ,  H01J37/32 ,  C23C16/50 ,  C23C16/46

Abstract: A semiconductor manufacturing, apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is co figured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.

公开(公告)号：US11094538B2

公开(公告)日：2021-08-17

申请号：US16260403

申请日：2019-01-29

Applicant: Samsung Electronics Co., Ltd.

Inventor： Keunwook Shin ,  Changhyun Kim ,  Kaoru Yamamoto ,  Changseok Lee ,  Hyunjae Song ,  Eunkyu Lee ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Sungjoo An

IPC: H01L21/02 ,  H01L29/16

Abstract: Provided is a method of forming graphene. The method of forming graphene includes treating a surface of a substrate placed in a reaction chamber with plasma while applying a bias to the substrate, and growing graphene on the surface of the substrate by plasma enhanced chemical vapor deposition (PECVD).

公开(公告)号：US11538810B2

公开(公告)日：2022-12-27

申请号：US17225601

申请日：2021-04-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyunseok Lim ,  Minhyuk Cho ,  Kyung-Eun Byun ,  Hyeonjin Shin ,  Kaoru Yamamoto ,  Jungsoo Yoon ,  Soyoung Lee ,  Geuno Jeong

IPC: H01L27/108

Abstract: A wiring structure includes a first conductive pattern including doped polysilicon on a substrate, an ohmic contact pattern including a metal silicide on the first conductive pattern, an oxidation prevention pattern including a metal silicon nitride on the ohmic contact pattern, a diffusion barrier including graphene on the oxidation prevention pattern, and a second conductive pattern including a metal on the diffusion barrier.

公开(公告)号：US11270881B2

公开(公告)日：2022-03-08

申请号：US16385441

申请日：2019-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kaoru Yamamoto ,  Chang-Hyun Kim ,  Hyun-Jae Song ,  Keun-Wook Shin ,  Hyeon-Jin Shin ,  Sung-Joo An ,  Chang-Seok Lee ,  Kee-Young Jun ,  Geun-O Jeong ,  Jang-Hee Lee

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.

公开(公告)号：US11508557B2

公开(公告)日：2022-11-22

申请号：US16371327

申请日：2019-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Joo An ,  Jeon-Il Lee ,  Kaoru Yamamoto ,  Jang-Hee Lee ,  Kee-Young Jun ,  Geun-O Jeong

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/46

Abstract: A semiconductor manufacturing apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is configured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.