公开(公告)号：US10790147B2

公开(公告)日：2020-09-29

申请号：US15960583

申请日：2018-04-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jang-Hee Lee ,  Se-Ran Oh ,  Hyun-Su Kim ,  Ik-Soo Kim ,  Seong-Gil Park ,  Geun-O Jeong

IPC: H01L21/033 ,  H01L21/3213 ,  H01L21/3205 ,  H01L21/3215

Abstract: A method of manufacturing a semiconductor device includes forming an etch target layer on a substrate; forming an amorphous metal layer on the etch target layer, the amorphous metal layer comprising nitrogen between 15 atomic percentage (at %) and 25 at %; forming an amorphous metal hardmask by patterning the amorphous metal layer; and etching the etch target layer by using the amorphous metal hardmask as an etching mask.

公开(公告)号：US20200071822A1

公开(公告)日：2020-03-05

申请号：US16371327

申请日：2019-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Joo An ,  Jeon-Il Lee ,  Kaoru Yamamoto ,  Jang-Hee Lee ,  Kee-Young Jun ,  Geun-O Jeong

IPC: C23C16/455 ,  H01L21/67 ,  H01J37/32 ,  C23C16/50 ,  C23C16/46

Abstract: A semiconductor manufacturing, apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is co figured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.

公开(公告)号：US11508557B2

公开(公告)日：2022-11-22

申请号：US16371327

申请日：2019-04-01

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sung-Joo An ,  Jeon-Il Lee ,  Kaoru Yamamoto ,  Jang-Hee Lee ,  Kee-Young Jun ,  Geun-O Jeong

IPC: C23C16/00 ,  H01L21/306 ,  H01J37/32 ,  H01L21/67 ,  C23C16/50 ,  C23C16/46

Abstract: A semiconductor manufacturing apparatus includes a process chamber. An insulating plate divides an interior space of the process chamber into a first space and a second space and thermally isolates the first space from the second space. A gas supplier is configured to supply a process gas to the first space. A radiator is configured to heat the first space. A stage is disposed within the second space and the stage is configured to support a substrate.

公开(公告)号：US11270881B2

公开(公告)日：2022-03-08

申请号：US16385441

申请日：2019-04-16

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kaoru Yamamoto ,  Chang-Hyun Kim ,  Hyun-Jae Song ,  Keun-Wook Shin ,  Hyeon-Jin Shin ,  Sung-Joo An ,  Chang-Seok Lee ,  Kee-Young Jun ,  Geun-O Jeong ,  Jang-Hee Lee

IPC: H01J37/32 ,  H01L21/02 ,  H01L21/67

Abstract: In a plasma deposition method, a substrate is loaded onto a substrate stage within a chamber. A first plasma is generated at a region separated from the substrate by a first distance. A first process gas is supplied to the first plasma region to perform a pre-treatment process on the substrate. A second plasma is generated at a region separated from the substrate by a second distance different from the first distance. A second process gas is supplied to the second plasma region to perform a deposition process on the substrate.