公开(公告)号：US11133311B2

公开(公告)日：2021-09-28

申请号：US16358989

申请日：2019-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar Bhuwalka ,  Kyoung Min Choi ,  Takeshi Okagaki ,  Dong Won Kim ,  Jong Chol Kim

IPC: H01L27/092 ,  H01L29/78 ,  H01L29/423 ,  H01L29/10 ,  H01L29/06

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

公开(公告)号：US09634092B2

公开(公告)日：2017-04-25

申请号：US15046455

申请日：2016-02-18

Applicant: Samsung Electronics Co., Ltd.

Inventor： Krishna Kumar Bhuwalka ,  Zhenhua Wu ,  Uihui Kwon ,  Keunho Lee

IPC: H01L29/06 ,  H01L29/423 ,  H01L29/66 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78 ,  H01L29/786 ,  H01L29/10 ,  H01L29/417

CPC classification number: H01L29/0673 ,  H01L29/0676 ,  H01L29/1037 ,  H01L29/41775 ,  H01L29/42392 ,  H01L29/66795 ,  H01L29/775 ,  H01L29/7782 ,  H01L29/785 ,  H01L29/78696

Abstract: Provided is a finFET device. The finFET device may include an active region which protrudes vertically from a substrate, a channel region disposed on a center of the active region, a drain region disposed on one side surface of the channel region, and a source region disposed on the other side surface of the channel region, a gate insulating layer formed on two opposing side surfaces of the channel region and having a U-shaped cross-section, gate spacers formed on outer surfaces of the gate insulating layer, drain spacers formed on two opposing side surfaces of the drain region, and source spacers formed on two opposing side surfaces of the source region, and at least one of the two side surfaces of the drain region has a tapered part.

公开(公告)号：US10217816B2

公开(公告)日：2019-02-26

申请号：US15296077

申请日：2016-10-18

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar Bhuwalka ,  Seong-Je Kim ,  Jong-Chol Kim ,  Hyun-Woo Kim

IPC: B82Y10/00 ,  H01L29/06 ,  H01L29/10 ,  H01L29/66 ,  H01L27/088 ,  H01L29/423 ,  H01L29/775 ,  H01L21/8234

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.

公开(公告)号：US11876097B2

公开(公告)日：2024-01-16

申请号：US17395778

申请日：2021-08-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar Bhuwalka ,  Kyoung Min Choi ,  Takeshi Okagaki ,  Dong Won Kim ,  Jong Chol Kim

IPC: H01L29/423 ,  H01L27/092 ,  H01L29/78 ,  H01L29/10 ,  H01L29/06

CPC classification number: H01L27/0928 ,  H01L29/0673 ,  H01L29/1033 ,  H01L29/42356 ,  H01L29/42392 ,  H01L29/7854

Abstract: A semiconductor device includes channel layers on a substrate, the channel layers being spaced apart from each other, and having first side surfaces and second side surfaces opposing each other in a first direction, a gate electrode surrounding the channel layers and having a first end portion and a second end portion, opposing each other in the first direction, and a source/drain layer on a first side of the gate electrode and in contact with the channel layers, a portion of the source/drain layer protruding further than the first end portion of the gate electrode in the first direction, wherein a first distance from the first end portion of the gate electrode to the first side surfaces of the channel layers is shorter than a second distance from the second end portion of the gate electrode to the second side surfaces of the channel layers.

公开(公告)号：US11515391B2

公开(公告)日：2022-11-29

申请号：US17070221

申请日：2020-10-14

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Krishna Kumar Bhuwalka ,  Seong-Je Kim ,  Jong-Chol Kim ,  Hyun-Woo Kim

IPC: H01L29/06 ,  H01L29/66 ,  H01L29/423 ,  B82Y10/00 ,  H01L29/775 ,  H01L29/10 ,  H01L29/786 ,  H01L21/8234

Abstract: A semiconductor device includes a plurality of channels, source/drain layers, and a gate structure. The channels are sequentially stacked on a substrate and are spaced apart from each other in a first direction perpendicular to a top surface of the substrate. The source/drain layers are connected to the channels and are at opposite sides of the channels in a second direction parallel to the top surface of the substrate. The gate structure encloses the channels. The channels have different lengths in the second direction and different thicknesses in the first direction.