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    Substrate inspection method and device
    1.
    发明授权
    Substrate inspection method and device 有权

    公开(公告)号：US12175655B2

    公开(公告)日：2024-12-24

    申请号：US17668622

    申请日：2022-02-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Doyoung Yoon ,  Junghoon Kim ,  Ilsuk Park ,  Kwangil Shin

    IPC: G06T7/00 ,  G06V10/14 ,  G06V10/22

    Abstract: A substrate inspection method includes: (i) acquiring a plurality of defect of interest (DOI) images of a substrate having a DOI, under a corresponding plurality of different optical conditions, (ii) acquiring a plurality of DOI difference images from differences between the plurality of DOI images and a reference image, and (iii) acquiring a plurality of DOI difference-of-difference (DOD) images from differences between the plurality of DOI difference images. The method also includes setting two optical conditions corresponding to a DOI DOD image having the highest signal-to-noise ratio (SNR) among the plurality of DOI DOD images, as a first optical condition and a second optical condition, and acquiring a first image of the substrate under the first optical condition and a second image of the substrate under the second optical condition. A first difference image is also acquired, which is a difference between the first image and the reference image, and a second difference image is acquired, which is a difference between the second image and the reference image. A DOD image is acquired that is a difference between the first difference image and the second difference image. A low-SNR defect candidate region is then detected from the first difference image, the second difference image, and the DOD image.

    SUBSTRATE INSPECTION METHOD AND DEVICE
    4.
    发明申请
    SUBSTRATE INSPECTION METHOD AND DEVICE 有权

    公开(公告)号：US20230033089A1

    公开(公告)日：2023-02-02

    申请号：US17668622

    申请日：2022-02-10

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Doyoung Yoon ,  Junghoon Kim ,  Ilsuk Park ,  Kwangil Shin

    IPC: G06T7/00 ,  G06V10/22 ,  G06V10/14

    Abstract: A substrate inspection method includes: (i) acquiring a plurality of defect of interest (DOI) images of a substrate having a DOI, under a corresponding plurality of different optical conditions, (ii) acquiring a plurality of DOI difference images from differences between the plurality of DOI images and a reference image, and (iii) acquiring a plurality of DOI difference-of-difference (DOD) images from differences between the plurality of DOI difference images. The method also includes setting two optical conditions corresponding to a DOI DOD image having the highest signal-to-noise ratio (SNR) among the plurality of DOI DOD images, as a first optical condition and a second optical condition, and acquiring a first image of the substrate under the first optical condition and a second image of the substrate under the second optical condition. A first difference image is also acquired, which is a difference between the first image and the reference image, and a second difference image is acquired, which is a difference between the second image and the reference image. A DOD image is acquired that is a difference between the first difference image and the second difference image. A low-SNR defect candidate region is then detected from the first difference image, the second difference image, and the DOD image.

    INSPECTION APPARATUS FOR INSPECTING SEMICONDUCTOR DEVICES USING CHARGED PARTICLES
    5.
    发明申请
    INSPECTION APPARATUS FOR INSPECTING SEMICONDUCTOR DEVICES USING CHARGED PARTICLES 有权

    公开(公告)号：US20210333225A1

    公开(公告)日：2021-10-28

    申请号：US17175173

    申请日：2021-02-12

    Applicant: Samsung Electronics Co., Ltd.

    Inventor： Suyoung Lee ,  Jongmin Kim ,  Ilsuk Park ,  Kwangil Shin ,  Chungsam Jun

    IPC: G01N23/225 ,  G01N23/221 ,  G06T7/00

    Abstract: An inspection apparatus and a method of inspecting a semiconductor device are disclosed. The inspection apparatus includes a stage on which a semiconductor device is positioned, a first light source irradiating a high-frequency light onto an inspection area of the semiconductor device to reduce a potential barrier of a PN junction in the semiconductor device, a beam scanner arranged over the semiconductor device and irradiating a charged particle beam onto the inspection area of the semiconductor device to generate secondary electrons, and a defect detector generating a detection image corresponding to the inspection area and detecting, based on a voltage contrast between a reference image and a plurality of detection images, a defect image indicating a defect in the semiconductor device from among the plurality of detection images.

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