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公开(公告)号:US20250151576A1
公开(公告)日:2025-05-08
申请号:US18764637
申请日:2024-07-05
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Jisoo Ham , Kyunglyong Kang , Jungu Kang , Youngmok Kim , Yongsang Jeong
IPC: H10K59/80 , G02B27/01 , H10K59/122 , H10K102/00
Abstract: An organic light-emitting display includes a substrate including a first pixel region, a second pixel region, and a division region disposed between the first pixel region and the second pixel region, an insulating layer disposed on the substrate and including a recess disposed in the division region, the insulating layer including a first inner side wall defining a first portion of the recess and a second inner side wall extending from the first inner side wall, defining a second portion of the recess, and having a curved shape, a plurality of pixel electrodes disposed on the insulating layer, a spacer disposed on a side wall of each of the pixel electrodes and the first inner side wall, and a first organic emission layer disposed on the spacer, wherein the spacer includes a material having an etch selectivity different than an etch selectivity of the insulating layer.
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公开(公告)号:US09859158B2
公开(公告)日:2018-01-02
申请号:US15239364
申请日:2016-08-17
Applicant: Samsung Electronics Co., Ltd.
Inventor: Kyunglyong Kang , Youngmok Kim , Hodae Oh , Kyoung-Eun Uhm
IPC: H01L21/311 , H01L21/768 , H01L21/28 , H01L29/423 , H01L21/8234 , H01L29/49 , H01L29/51 , H01L29/78
CPC classification number: H01L21/76877 , H01L21/28123 , H01L21/31111 , H01L21/31144 , H01L21/823462 , H01L21/823481 , H01L29/42368 , H01L29/4933 , H01L29/513 , H01L29/517 , H01L29/7833
Abstract: A method for manufacturing a semiconductor device includes forming a device isolation layer in a substrate to define an active region, forming a gate insulating layer covering at least a portion of the active region, forming a gate electrode on the gate insulating layer, and forming an interlayer insulating layer on the gate electrode. The gate insulating layer includes a first portion overlapping with the active region and a second portion overlapping with the device isolation layer. The forming of the gate insulating layer includes etching at least a part of the second portion of the gate insulating layer to thin the part of the second portion of the gate insulating layer.
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公开(公告)号:US11348504B2
公开(公告)日:2022-05-31
申请号:US17139449
申请日:2020-12-31
Applicant: SAMSUNG ELECTRONICS CO., LTD.
Inventor: Youngmok Kim , Kyunglyong Kang , Jungu Kang , Boyoung Seo , Yongsang Jeong
IPC: G09G3/20
Abstract: A display apparatus includes a display panel; and a display driver integrated circuit (DDI) chip coupled to the display panel, the DDI chip being configured to generate a display driving signal for driving the display panel based on image data. The DDI chip may include: a first embedded memory device embedded in the DDI chip and configured to store compensation data for compensating for electrical and optical characteristics of a plurality of pixels included in the display panel; a timing controller configured to control signals for driving the display panel, and to generate a data control signal based on the image data and the compensation data; and a data driver configured to provide a data voltage to the display panel according to the data control signal. The first embedded memory device may not include static random access memory (SRAM).
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