公开(公告)号：US09934939B2

公开(公告)日：2018-04-03

申请号：US14464325

申请日：2014-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kook Kim ,  Woo Seok Ko ,  Yu Sin Yang ,  Sang Kil Lee ,  Chung Sam Jun

IPC: H01J37/28 ,  H01J37/22 ,  G01N23/22 ,  G03F7/20 ,  G01N23/203 ,  G01N23/225

CPC classification number: H01J37/28 ,  G01N23/203 ,  G01N23/22 ,  G01N23/2206 ,  G01N23/2251 ,  G03F7/70633 ,  H01J37/222 ,  H01J2237/063 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/2806 ,  H01J2237/2814 ,  H01J2237/2817

Abstract: A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.

公开(公告)号：US10585115B2

公开(公告)日：2020-03-10

申请号：US16130699

申请日：2018-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Duck Mahn Oh ,  Sung Yoon Ryu ,  Young Hoon Sohn ,  Chung Sam Jun ,  Yun Jung Jee

IPC: G01Q60/00 ,  G01Q60/16 ,  G01Q80/00 ,  G02B21/00

Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.

公开(公告)号：US10222414B2

公开(公告)日：2019-03-05

申请号：US15286626

申请日：2016-10-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jae Wan Hong ,  Jeong Hoi Kim ,  Yu Sin Yang ,  Sang Kil Lee ,  Chung Sam Jun

IPC: G01R31/28 ,  G01R1/04

Abstract: An apparatus for exchanging a probe includes a stacker configured to receive a probe and to align the probe, a probe connector connected to the probe, and a laser alignment unit including a light emitter and a light receiver. The light emitter is configured to emit a laser beam to the probe, and the light receiver is configured to detect the laser beam reflected by the probe. The laser alignment unit is configured to detect when the probe is properly aligned on the probe connector using the light receiver, and the laser alignment unit is configured to stop moving the stacker when it is detected that the probe is properly aligned.

公开(公告)号：US20150248127A1

公开(公告)日：2015-09-03

申请号：US14635193

申请日：2015-03-02

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yu Sin Yang ,  Young Hoon Sohn ,  Bae Jin Lee ,  Sang Kil Lee ,  Chung Sam Jun

IPC: G05B19/418

CPC classification number: G05B19/418 ,  G05B19/41875 ,  G05B2219/45031 ,  H01L21/3086 ,  H01L22/12 ,  H01L22/20 ,  Y02P90/22

Abstract: A process management system can include a processing device that can be configured to perform a semiconductor process on a plurality of wafers, the processing device controlled by a process parameter. A control device can be configured to acquire statistical data relating to the process parameter and can be configured to select a reference wafer from the plurality of wafers. The control device can be configured to compare a respective process parameter used for the reference wafer with the statistical data and can be configured to set a reference condition for the process parameter.

Abstract translation: 过程管理系统可以包括处理设备，其可被配置为在多个晶片上执行半导体处理，该处理设备由过程参数控制。 控制装置可以被配置为获取与过程参数相关的统计数据，并且可以被配置为从多个晶片中选择参考晶片。 控制装置可以被配置为将用于参考晶片的相应过程参数与统计数据进行比较，并且可以被配置为设置用于过程参数的参考条件。

公开(公告)号：US20150115154A1

公开(公告)日：2015-04-30

申请号：US14464325

申请日：2014-08-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Kook Kim ,  Woo Seok Ko ,  Yu Sin Yang ,  Sang Kil Lee ,  Chung Sam Jun

IPC: H01J37/28 ,  G01B15/00 ,  H01J37/22

CPC classification number: H01J37/28 ,  G01N23/203 ,  G01N23/22 ,  G01N23/2206 ,  G01N23/2251 ,  G03F7/70633 ,  H01J37/222 ,  H01J2237/063 ,  H01J2237/24475 ,  H01J2237/2448 ,  H01J2237/24495 ,  H01J2237/2806 ,  H01J2237/2814 ,  H01J2237/2817

Abstract: A method of measuring an overlay offset using a scanning electron microscope system includes: scanning an in-cell region, which includes a lower structure and an upper structure stacked in a sample, using a primary electron beam with a landing energy of at least 10 kV; detecting electrons emitted from the scanned in-cell region; and measuring an overlay offset with respect to overlapping patterns included in the in-cell region using an image of the in-cell region that is generated based on the detected electrons emitted from the scanned in-cell region.

Abstract translation: 使用扫描电子显微镜系统测量覆盖偏移的方法包括：使用具有至少10kV的着陆能量的一次电子束扫描包括下部结构和堆叠在样品中的上部结构的单元格区域 ; 检测从扫描的单元格区域发射的电子; 以及使用基于从扫描的单元格区域发射的检测到的电子产生的单元格区域的图像，测量相对于包含在单元格区域中的重叠图案的覆盖偏移。

公开(公告)号：US20190170788A1

公开(公告)日：2019-06-06

申请号：US16130699

申请日：2018-09-13

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Duck Mahn Oh ,  Sung Yoon Ryu ,  Young Hoon Sohn ,  Chung Sam Jun ,  Yun Jung Jee

IPC: G01Q60/16 ,  G02B21/00 ,  G01Q80/00

CPC classification number: G01Q60/16 ,  G01Q10/06 ,  G01Q60/30 ,  G01Q80/00 ,  G02B21/002

Abstract: A scanning probe inspector comprises: a probe that includes a cantilever and a tip whose length corresponds to a depth of a trench that is formed in a wafer; a trench detector that acquires location information of the trench using the probe, where the location information includes depth information of the trench; a controller that inserts the tip into a first point where there exists a trench based on the location information of the trench, and moves the tip through the trench using the location information of the trench; and a defect detector that detects a presence of a defect in a sidewall of the trench as the tip is moved through the trench.

公开(公告)号：US10281410B2

公开(公告)日：2019-05-07

申请号：US15867070

申请日：2018-01-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Min Ho Rim ,  Yu Sin Yang ,  Chung Sam Jun ,  Yun Jung Jee

IPC: G01N21/95 ,  H01L21/67 ,  H01L21/66

Abstract: A method of testing can include providing a first beam having a first focal length and a second beam having a second focal length that is less than the first focal length to a stage region to provide a first reflected beam and a second reflected beam from the stage region. The first reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. The second reflected beam can be detected among the first reflected beam and the second reflected beam reflected from the stage region. A first image can be generated from the first reflected beam and a second image can be generated from the second reflected beam. The first image and the second image can be combined to provide a 3D image.

公开(公告)号：US10068324B2

公开(公告)日：2018-09-04

申请号：US15291590

申请日：2016-10-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jung Soo Kim ,  Jin Kwan Kim ,  Chung Sam Jun ,  Yu sin Yang ,  Soo Seok Lee

IPC: G06T7/00 ,  G06T7/50 ,  G06K9/46 ,  G01Q30/02 ,  H01J37/28 ,  G06T7/529 ,  G06T7/41

Abstract: A 3D profiling system of a semiconductor chip is provided and includes a storage unit that receives scanning electron microscope (SEM) images of a plurality of semiconductor devices having respective data with respect to a plurality of different components and gray levels of each SEM image. An extraction unit that performs principal component analysis (PCA) on the gray level of the SEM image and separates principal components from among the plurality of different components is also part of the system. Additionally, a calculation unit receives provision of actually measured values of the plurality of semiconductor devices, and applies a multiple linear regression to the principal components based on the measured values to complete a 3D profile of the semiconductor chip.