公开(公告)号：US11495597B2

公开(公告)日：2022-11-08

申请号：US17030556

申请日：2020-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US20180331100A1

公开(公告)日：2018-11-15

申请号：US16028272

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye-Lan Lee ,  Sang-Bom Kang ,  Jae-Jung Kim ,  Moon-Kyu Park ,  Jae-Yeol Song ,  June-Hee Lee ,  Yong-Ho Ha ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/84 ,  H01L29/66 ,  H01L29/49 ,  H01L21/8238 ,  H01L27/12 ,  H01L27/092 ,  H01L29/51 ,  H01L29/165

CPC classification number: H01L27/0886 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

公开(公告)号：US20210020631A1

公开(公告)日：2021-01-21

申请号：US17030556

申请日：2020-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US10361194B2

公开(公告)日：2019-07-23

申请号：US15335984

申请日：2016-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L21/02 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/8238

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US11127739B2

公开(公告)日：2021-09-21

申请号：US16028272

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye-Lan Lee ,  Sang-Bom Kang ,  Jae-Jung Kim ,  Moon-Kyu Park ,  Jae-Yeol Song ,  June-Hee Lee ,  Yong-Ho Ha ,  Sang-Jin Hyun

IPC: H01L21/8238 ,  H01L27/088 ,  H01L29/49 ,  H01L29/66 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/51

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

公开(公告)号：US20190312030A1

公开(公告)日：2019-10-10

申请号：US16432233

申请日：2019-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/78 ,  H01L29/51 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/02 ,  H01L29/43

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.