公开(公告)号：US20180012889A1

公开(公告)日：2018-01-11

申请号：US15697720

申请日：2017-09-07

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Yeol Song ,  Wan-don Kim ,  Oh-seong Kwon ,  Hyeok-jun Son ,  Sang-jin Hyun ,  Hoon-joo NA

IPC: H01L27/088 ,  H01L21/8234 ,  H01L29/06

CPC classification number: H01L27/0886 ,  H01L21/28088 ,  H01L21/28176 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823462 ,  H01L29/0653 ,  H01L29/4966 ,  H01L29/513 ,  H01L29/517 ,  H01L29/66545

Abstract: Integrated circuit devices include a substrate including first and second fin-type active regions and first and second gate structures. The first gate structure includes first gate insulating layer on the first fin-type active region to cover upper surface and both side surfaces of the first fin-type active region, first gate electrode on the first gate insulating layer and has first thickness in first direction perpendicular to upper surface of the substrate, and second gate electrode on the first gate electrode. The second gate structure includes second gate insulating layer on the second fin-type active region to cover upper surface and both side surfaces of the second fin-type active region, third gate insulating layer on the second gate insulating layer, third gate electrode on the third gate insulating layer and has second thickness different from the first thickness in the first direction, and fourth gate electrode on the third gate electrode.

公开(公告)号：US20180331100A1

公开(公告)日：2018-11-15

申请号：US16028272

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye-Lan Lee ,  Sang-Bom Kang ,  Jae-Jung Kim ,  Moon-Kyu Park ,  Jae-Yeol Song ,  June-Hee Lee ,  Yong-Ho Ha ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/84 ,  H01L29/66 ,  H01L29/49 ,  H01L21/8238 ,  H01L27/12 ,  H01L27/092 ,  H01L29/51 ,  H01L29/165

CPC classification number: H01L27/0886 ,  H01L21/823821 ,  H01L21/845 ,  H01L27/0924 ,  H01L27/1211 ,  H01L29/165 ,  H01L29/4966 ,  H01L29/517 ,  H01L29/66545

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

公开(公告)号：US11127739B2

公开(公告)日：2021-09-21

申请号：US16028272

申请日：2018-07-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Hye-Lan Lee ,  Sang-Bom Kang ,  Jae-Jung Kim ,  Moon-Kyu Park ,  Jae-Yeol Song ,  June-Hee Lee ,  Yong-Ho Ha ,  Sang-Jin Hyun

IPC: H01L21/8238 ,  H01L27/088 ,  H01L29/49 ,  H01L29/66 ,  H01L21/84 ,  H01L27/092 ,  H01L27/12 ,  H01L29/51

Abstract: A semiconductor device includes a substrate and first and second gate electrodes on the substrate. The first gate electrode includes a first gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion and away from the substrate defining a first trench having a first width and a first functional film filling the first trench. The second gate electrode includes a second gate insulation film having a bottom portion on the substrate and sidewall portions extending from the bottom portion defining a second trench having a second width different from the first width, a second functional film conforming to the second gate insulation film in the second trench and defining a third trench, and a metal region in the third trench. The first width may be less than the second width.

公开(公告)号：US20190312030A1

公开(公告)日：2019-10-10

申请号：US16432233

申请日：2019-06-05

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/8238 ,  H01L29/49 ,  H01L29/78 ,  H01L29/51 ,  H01L21/8234 ,  H01L27/092 ,  H01L21/02 ,  H01L29/43

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US11495597B2

公开(公告)日：2022-11-08

申请号：US17030556

申请日：2020-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US10312340B2

公开(公告)日：2019-06-04

申请号：US15717324

申请日：2017-09-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Wan-Don Kim ,  Oh-Seong Kwon ,  Hoon-Joo Na ,  Hyeok-Jun Son ,  Jae-Yeol Song ,  Sung-Kee Han ,  Sang-Jin Hyun

IPC: H01L29/49 ,  H01L27/088 ,  H01L29/423 ,  H01L21/8234

Abstract: A semiconductor device includes a first transistor comprising a first dielectric film on a substrate and a first work function metal film of a first conductivity type on the first dielectric film, a second transistor comprising a second dielectric film on the substrate and a second work function metal film of the first conductivity type on the second dielectric film, and a third transistor comprising a third dielectric film on the substrate and a third work function metal film of the first conductivity type on the third dielectric film. The first dielectric film comprises a work function tuning material and the second dielectric film does not comprise the work function tuning material. The first work function metal film has different thickness than the third work function metal film. Related methods are also described.

公开(公告)号：US20170125408A1

公开(公告)日：2017-05-04

申请号：US15335984

申请日：2016-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu PARK ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L29/49 ,  H01L21/8234 ,  H01L29/78

CPC classification number: H01L27/088 ,  H01L21/02345 ,  H01L21/02356 ,  H01L21/823431 ,  H01L21/82345 ,  H01L21/823456 ,  H01L21/823462 ,  H01L21/823807 ,  H01L21/823821 ,  H01L21/823842 ,  H01L27/0886 ,  H01L27/092 ,  H01L27/0924 ,  H01L29/435 ,  H01L29/4941 ,  H01L29/4958 ,  H01L29/4966 ,  H01L29/4983 ,  H01L29/513 ,  H01L29/517 ,  H01L29/518 ,  H01L29/785 ,  H01L29/7851 ,  H01L29/7854 ,  H01L29/7856

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US20210020631A1

公开(公告)日：2021-01-21

申请号：US17030556

申请日：2020-09-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L27/088 ,  H01L21/8238 ,  H01L21/02 ,  H01L21/8234 ,  H01L27/092 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US10361194B2

公开(公告)日：2019-07-23

申请号：US15335984

申请日：2016-10-27

Applicant: Samsung Electronics Co., Ltd.

Inventor： Moon-Kyu Park ,  Jae-Yeol Song ,  Hoon-Joo Na ,  Yoon-Tae Hwang ,  Ki-Joong Yoon ,  Sang-Jin Hyun

IPC: H01L21/02 ,  H01L29/43 ,  H01L29/49 ,  H01L29/51 ,  H01L29/78 ,  H01L27/088 ,  H01L27/092 ,  H01L21/8234 ,  H01L21/8238

Abstract: Semiconductor device having less defects in a gate insulating film and improved reliability and methods of forming the semiconductor devices are provided. The semiconductor devices may include a gate insulating film on a substrate and a gate electrode structure on the gate insulating film. The gate electrode structure may include a lower conductive film, a silicon oxide film, and an upper conductive film sequentially stacked on the gate insulating film. The lower conductive film may include a barrier metal layer.

公开(公告)号：US20140203335A1

公开(公告)日：2014-07-24

申请号：US14155579

申请日：2014-01-15

Applicant: Samsung Electronics Co., Ltd.

Inventor： Jae-Yeol Song ,  June-Hee Lee ,  Hye-Lan Lee ,  Sang-Jin Hyun ,  Sang-Bom Kang

IPC: H01L29/78 ,  H01L21/28

CPC classification number: H01L29/78 ,  H01L21/28088 ,  H01L21/823842 ,  H01L27/1104 ,  H01L29/51 ,  H01L29/6681

Abstract: A semiconductor device includes an insulating film on a substrate and including a trench, a gate insulating film in the trench, a DIT (Density of Interface Trap) improvement film on the gate insulating film to improve a DIT of the substrate, and a first conductivity type work function adjustment film on the DIT improvement film. Related methods of forming semiconductor devices are also disclosed.

Abstract translation: 半导体器件包括在衬底上的绝缘膜，其包括沟槽，沟槽中的栅极绝缘膜，栅极绝缘膜上的DIT（界面陷阱密度）改进膜，​​以改善衬底的DIT，以及第一导电性 DIT改进膜上的工作功能调整膜。 还公开了形成半导体器件的相关方法。