公开(公告)号：US20230387118A1

公开(公告)日：2023-11-30

申请号：US18094452

申请日：2023-01-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Su Young BAE ,  Jae Yeol SONG ,  Oh Seong KWON ,  Sang Yong KIM

IPC: H01L27/092 ,  H01L29/06 ,  H01L29/423 ,  H01L29/49 ,  H01L29/775 ,  H01L21/8238 ,  H01L29/66

CPC classification number: H01L27/092 ,  H01L29/0673 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/775 ,  H01L21/823807 ,  H01L21/823857 ,  H01L29/66545 ,  H01L29/66439

Abstract: A semiconductor device includes a substrate, an active pattern disposed on the substrate and extending in a first horizontal direction, a gate spacer disposed along each of sidewalls of a gate trench on the active pattern and extending in a second horizontal direction different from the first horizontal direction, a first gate insulating layer disposed along a sidewall and a bottom surface of the gate trench, a first conductive layer disposed on the first gate insulating layer inside the gate trench, a second gate insulating layer disposed on the first conductive layer inside the gate trench, and including a material different from a material of the first gate insulating layer, a second conductive layer disposed on the second gate insulating layer inside the gate trench, and a third conductive layer disposed on the second conductive layer so as to fill a remaining inner space of the gate trench.

公开(公告)号：US20190109214A1

公开(公告)日：2019-04-11

申请号：US16197752

申请日：2018-11-21

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Yub JEON ,  Tae Yong KWON ,  Oh Seong KWON ,  Soo Yeon JEONG ,  Yong Hee PARK ,  Jong Ryeol YOO

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/78 ,  H01L29/423

Abstract: A vertical tunnel field effect transistor (VTFET) including a fin structure protruding from a substrate including a source/drain region, an epitaxially-grown source/drain structure on the fin structure, a cap including pillar portions, the pillar portions covering side surfaces of the epitaxially-grown source/drain structure and partially covering side surfaces of a top portion of the fin structure, a gate insulator covering remaining portions of the side surfaces of the fin structure under the pillar portions of the cap, a work function metal gate on the gate insulator, and a separation pattern surrounding a bottom portion of a fin structure such that the work function metal gate is vertically between the cap and the separation pattern, the separation pattern electrically isolating the work function metal gate from the source/drain region, and a method of manufacturing the same may be provided.

公开(公告)号：US20180350952A1

公开(公告)日：2018-12-06

申请号：US15878711

申请日：2018-01-24

Applicant: Samsung Electronics Co., Ltd.

Inventor： Kyung Yub JEON ,  Tae Yong KWON ,  Oh Seong KWON ,  Soo Yeon JEONG ,  Yong Hee PARK ,  Jong Ryeol YOO

IPC: H01L29/66 ,  H01L29/78 ,  H01L29/423 ,  H01L29/10

CPC classification number: H01L29/66666 ,  H01L29/1037 ,  H01L29/4238 ,  H01L29/66553 ,  H01L29/7827

Abstract: A vertical tunnel field effect transistor (VTFET) including a fin structure protruding from a substrate including a source/drain region, an epitaxially-grown source/drain structure on the fin structure, a cap including pillar portions, the pillar portions covering side surfaces of the epitaxially-grown source/drain structure and partially covering side surfaces of a top portion of the fin structure, a gate insulator covering remaining portions of the side surfaces of the fin structure under the pillar portions of the cap, a work function metal gate on the gate insulator, and a separation pattern surrounding a bottom portion of a fin structure such that the work function metal gate is vertically between the cap and the separation pattern, the separation pattern electrically isolating the work function metal gate from the source/drain region, and a method of manufacturing the same may be provided.