Abstract:
A storage device is provided including an interface circuit configured to receive application information from a host; a field programmable gate array (FPGA); a neural processing unit (NPU); and a central processing unit (CPU) configured to select a hardware image from among a plurality of hardware images stored in a memory using the application information, and reconfigure the FPGA using the selected hardware image. The NPU is configured to perform an operation using the reconfigured FPGA.
Abstract:
A method of programming a non-volatile memory device includes; defining a set of verification voltages, setting a maximum verification voltage among verification voltages that are less than or equal to a first target programming voltage to be a target verification voltage, calculating a number of extra pulses based on the target verification voltage and the first target programming voltage, verifying whether a threshold voltage of the memory cell is equal to or greater than the target verification voltage by applying an incremental step pulse program (ISPP) pulse to the memory cell and then applying at least one verification voltage in the set of verification voltages to the memory cell, and further applying the ISPP pulse to the memory cell a number of times equal to the number of extra pulses when the threshold voltage is verified to be equal to or greater than the target verification voltage.
Abstract:
A resistive memory system having a plurality of memory cells includes a memory device having a resistive memory cell array and a controller. The controller generates write data to be written to the memory cell array by encoding input data such that the input data corresponds to an erase state and a plurality of programming states that a memory cell may have. The input data is encoded such that at least one of the number of memory cells assigned a first programming state and the number of memory cells assigned a second programming state is smaller than at least one of the numbers of memory cells in the erase state and the other programming states. The first programming state has a highest resistance level among the plurality of programming states, and the second programming state has a second highest resistance level among the plurality of programming states.
Abstract:
An artificial intelligence calculation semiconductor device is provided. The artificial intelligence calculation semiconductor device comprising: a control unit; and a MAC (Multiply and Accumulator) calculator which executes a homomorphic encryption calculation through the control unit, wherein the MAC calculator includes an NTT (Numeric Theoretic Transform)/INTT (Inverse NTT) circuit which generates cipher texts by performing a homomorphic multiplication calculation through transformation or inverse transformation of data, a cipher text multiplier which executes a multiplication calculation between the cipher texts, a cipher text adder/subtractor which executes addition and/or subtraction calculations between the cipher texts, and a rotator which performs a cyclic shift of a slot of the cipher texts.
Abstract:
An operating method of a memory controller includes generating a random value using a seed, generating encrypted intermediate data by encrypting plaintext data using the random value, and storing the seed and the intermediate data in a memory device. Ciphertext data is generated using the seed and the intermediate data based on Ring Learning with Error (RLWE).