Abstract:
A method of controlling a resistive memory device includes: accessing a first pulse power specification satisfying a memory cell coefficient associated with at least a first of a plurality of memory cells included in a memory cell array; generating a first pulse power according to the accessed first pulse power specification; and performing a write operation on at least the first of the plurality of memory cells using the generated first pulse power.
Abstract:
An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.
Abstract:
Provided are a multi-thread processing apparatus and method for sequentially processing threads. The multi-thread processing method includes scheduling, at a processor, one of a plurality of thread groups allocated by a job distributor, determining whether the thread group has been initialized based on an examination an uninitialized flag of the scheduled thread group, generating a thread group descriptor for the scheduled thread group and initializing the thread group based on the determination of whether the thread group has been initialized, and initializing a thread descriptor based on a determination of whether initialization is needed and sequentially executing each thread in the scheduled thread group.