公开(公告)号：US09865474B2

公开(公告)日：2018-01-09

申请号：US15347331

申请日：2016-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gon-jun Kim ,  Vladimir Volynets ,  Sang-jin An ,  Hee-jeon Yang ,  Sangheon Lee ,  Sung-keun Cho ,  Xinglong Chen ,  In-ho Choi

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/02046 ,  H01L21/3065

Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

公开(公告)号：US10418250B2

公开(公告)日：2019-09-17

申请号：US15870227

申请日：2018-01-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Gon-jun Kim ,  Yuri Barsukov ,  Vladimir Volynets ,  Dali Liu ,  Sang-jin An ,  Beom-jin Yoo ,  Sang-heon Lee ,  Shamik Patel

IPC: H01L21/3065 ,  H01J37/32 ,  H01L21/02

Abstract: An etching method using a remote plasma source (RPS) and a method of fabricating a semiconductor device, the etching method including generating a plasma by supplying a process gas to at least one RPS and applying power to the at least one RPS; and etching a first material film including SiNx by supplying the plasma and at least one control gas selected from HBr, HCl, HI, NH3, SiH4, CHF3, and CH2F2 to a process chamber.

公开(公告)号：US20170062235A1

公开(公告)日：2017-03-02

申请号：US15347331

申请日：2016-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gon-Jun Kim ,  Vladimir Volynets ,  Sang-jin An ,  Hee-jeon Yang ,  Sangheon Lee ,  Sung-keun Cho ,  Xinglong Chen ,  In-ho Choi

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/02046 ,  H01L21/3065

Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

Abstract translation: 使用等离子体的蚀刻方法包括通过向至少一个远程等离子体源（RPS）提供处理气体并向所述至少一个RPS施加电力来产生等离子体，并且通过向处理室供应水（H 2 O）和等离子体来蚀刻蚀刻对象 。