公开(公告)号：US09768051B2

公开(公告)日：2017-09-19

申请号：US15071228

申请日：2016-03-16

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Xinglong Chen ,  Dali Liu ,  Sung-Ho Jang ,  Yong-Ho Lim

IPC: H01L21/687

CPC classification number: H01L21/68728

Abstract: A wafer clamping apparatus, including a plurality of support pins under a wafer, the plurality of pins to support the wafer; and a side clamp at a lateral side of the wafer, the side clamp to directly contact a lateral side of the wafer to press the wafer, the side clamp to press the wafer in a first direction or a second direction, the first direction and the second direction being different directions.

公开(公告)号：US10529618B2

公开(公告)日：2020-01-07

申请号：US15870175

申请日：2018-01-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Siqing Lu ,  Sang-Hoon Ahn ,  Xinglong Chen ,  Ki-Hyun Kim ,  Kyu-In Shim

IPC: H01L21/76 ,  H01L21/768 ,  H01L23/528 ,  H01L21/02 ,  H01L21/311 ,  H01L23/522 ,  H01L21/027 ,  H01L21/321

Abstract: A method of manufacturing a semiconductor device is disclosed. The method includes forming a first insulting layer on a substrate, forming a first conductor pattern in the first insulating layer, forming a second insulating layer on the first insulating layer, and forming a second wiring pattern and a contact via in the second insulating layer, wherein a top surface of the first insulating layer is higher than a top surface of the first conductor pattern.

公开(公告)号：US09865474B2

公开(公告)日：2018-01-09

申请号：US15347331

申请日：2016-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gon-jun Kim ,  Vladimir Volynets ,  Sang-jin An ,  Hee-jeon Yang ,  Sangheon Lee ,  Sung-keun Cho ,  Xinglong Chen ,  In-ho Choi

IPC: H01L21/302 ,  H01L21/461 ,  H01L21/311 ,  H01J37/32 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/02046 ,  H01L21/3065

Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

公开(公告)号：US20170062235A1

公开(公告)日：2017-03-02

申请号：US15347331

申请日：2016-11-09

Applicant: Samsung Electronics Co., Ltd.

Inventor： Gon-Jun Kim ,  Vladimir Volynets ,  Sang-jin An ,  Hee-jeon Yang ,  Sangheon Lee ,  Sung-keun Cho ,  Xinglong Chen ,  In-ho Choi

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3065

CPC classification number: H01L21/31116 ,  H01J37/32357 ,  H01L21/02046 ,  H01L21/3065

Abstract: An etching method using plasma includes generating plasma by supplying process gases to at least one remote plasma source (RPS) and applying power to the at least one RPS, and etching an etching object by supplying water (H2O) and the plasma to a process chamber.

Abstract translation: 使用等离子体的蚀刻方法包括通过向至少一个远程等离子体源（RPS）提供处理气体并向所述至少一个RPS施加电力来产生等离子体，并且通过向处理室供应水（H 2 O）和等离子体来蚀刻蚀刻对象 。