公开(公告)号：US11503238B2

公开(公告)日：2022-11-15

申请号：US16942354

申请日：2020-07-29

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Hyun Ko ,  Kyu lk Cho ,  Jin Young Jeong ,  Dong Jae Han ,  Seok Yong Hong

IPC: H04N5/3745 ,  H04N5/361 ,  H04N5/378 ,  H01L27/148 ,  H01L27/146 ,  H04N5/369

Abstract: An image sensor is provided. The image sensor includes a pixel array including first and second pixels, the first and second pixels receiving the same transfer gate signal and outputting first and second signal voltages, respectively, a transfer gate driver receiving first and second voltages and generating the transfer gate signal, the transfer gate signal having the first voltage as its maximum voltage and having the second voltage as its minimum voltage and a compensation module detecting a variation in the second voltage, generating a compensation voltage based on the variation in the second voltage, and performing a compensation operation.

公开(公告)号：US20180205903A1

公开(公告)日：2018-07-19

申请号：US15873344

申请日：2018-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： JU HYUN KO ,  Kyu Ik Cho ,  Jin Young Jeong ,  Dong Jae Han ,  Seok Yong Hong

IPC: H04N5/3745 ,  H04N5/361 ,  H04N5/369 ,  H01L27/148 ,  H01L27/146 ,  H04N5/378

CPC classification number: H04N5/3745 ,  H01L27/14605 ,  H01L27/14806 ,  H04N5/361 ,  H04N5/3698 ,  H04N5/37455 ,  H04N5/378

Abstract: An image sensor is provided. The image sensor includes a pixel array including first and second pixels, the first and second pixels receiving the same transfer gate signal and outputting first and second signal voltages, respectively, a transfer gate driver receiving first and second voltages and generating the transfer gate signal, the transfer gate signal having the first voltage as its maximum voltage and having the second voltage as its minimum voltage and a compensation module detecting a variation in the second voltage, generating a compensation voltage based on the variation in the second voltage, and performing a compensation operation.

公开(公告)号：US10778919B2

公开(公告)日：2020-09-15

申请号：US15873344

申请日：2018-01-17

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Ju Hyun Ko ,  Kyu Ik Cho ,  Jin Young Jeong ,  Dong Jae Han ,  Seok Yong Hong

IPC: H04N5/3745 ,  H04N5/361 ,  H04N5/378 ,  H01L27/148 ,  H01L27/146 ,  H04N5/369

Abstract: An image sensor is provided. The image sensor includes a pixel array including first and second pixels, the first and second pixels receiving the same transfer gate signal and outputting first and second signal voltages, respectively, a transfer gate driver receiving first and second voltages and generating the transfer gate signal, the transfer gate signal having the first voltage as its maximum voltage and having the second voltage as its minimum voltage and a compensation module detecting a variation in the second voltage, generating a compensation voltage based on the variation in the second voltage, and performing a compensation operation.

公开(公告)号：US09177987B2

公开(公告)日：2015-11-03

申请号：US14051179

申请日：2013-10-10

Applicant: Samsung Electronics Co., Ltd.

Inventor： Tae-Yon Lee ,  Ju Hwan Jung ,  Seok Yong Hong ,  Tae-Chan Kim ,  Dong Ki Min ,  Yoon Dong Park ,  Sang-Chul Sul ,  Tae-Seok Oh ,  Je Il Ryu ,  Kwang-Hyun Lee ,  Young-Gu Jin

IPC: H01L27/00 ,  H01L27/146 ,  H04N5/376

CPC classification number: H01L27/14643 ,  H01L27/14612 ,  H01L27/1464 ,  H04N5/3765

Abstract: A binary complementary metal-oxide-semiconductor (CMOS) image sensor includes a pixel array and a readout circuit. The pixel array includes at least one pixel having a plurality of sub-pixels. The readout circuit is configured to quantize a pixel signal output from the pixel using a reference signal. The pixel signal corresponds to sub-pixel signals output from sub-pixels, from among the plurality of sub-pixels, activated in response to incident light.

Abstract translation: 二元互补金属氧化物半导体（CMOS）图像传感器包括像素阵列和读出电路。 像素阵列包括具有多个子像素的至少一个像素。 读出电路被配置为使用参考信号量化从像素输出的像素信号。 像素信号对应于从子像素输出的子像素信号，从响应于入射光激活的多个子像素之中。