公开(公告)号：US10008270B2

公开(公告)日：2018-06-26

申请号：US15383408

申请日：2016-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee ,  Ji-suk Kim ,  Chang-yeon Yu ,  Jin-young Chun ,  Se-heon Baek ,  Jun-young Ko ,  Seong-ook Jung ,  Ji-su Kim

IPC: G11C11/34 ,  G11C16/10 ,  G11C16/04 ,  G11C16/24 ,  G11C16/34 ,  G11C11/56

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/3459

Abstract: A programming method of a non-volatile memory device including a plurality of memory cells arranged in a plurality of cell strings includes sequentially applying a first pass voltage to unselected word lines of word lines connected to the plurality of memory cells during a first interval and a second pass voltage higher than the first pass voltage to the unselected word lines during a second interval; and applying a discharge voltage lower than a program voltage to a selected word line of the word lines connected to the plurality of memory cells after applying the program voltage to the selected word line in the first interval, and applying the program voltage to the selected word line during the second interval.

公开(公告)号：US09978458B2

公开(公告)日：2018-05-22

申请号：US15383132

申请日：2016-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee ,  Ji-suk Kim ,  Chang-yeon Yu ,  Jin-young Chun ,  Se-heon Baek ,  Jun-young Ko ,  Seong-ook Jung ,  Ji-su Kim

IPC: G11C11/34 ,  G11C16/34 ,  G11C16/28 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26 ,  G11C11/56

CPC classification number: G11C16/3459 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/28

Abstract: A data read operation method of a memory device includes applying a read voltage having a first preparation level and a first target level to a word line of a selected cell in the memory device to read a program state of the selected cell, applying a first read pass voltage having a second preparation level and a second target level to at least one word line of first non-selected cells not adjacent to the selected cell and in the same string as the selected cell, and applying a second read pass voltage having a third target level to a word line of at least one second non-selected cell adjacent to the selected cell.