公开(公告)号：US10008270B2

公开(公告)日：2018-06-26

申请号：US15383408

申请日：2016-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee ,  Ji-suk Kim ,  Chang-yeon Yu ,  Jin-young Chun ,  Se-heon Baek ,  Jun-young Ko ,  Seong-ook Jung ,  Ji-su Kim

IPC: G11C11/34 ,  G11C16/10 ,  G11C16/04 ,  G11C16/24 ,  G11C16/34 ,  G11C11/56

CPC classification number: G11C16/10 ,  G11C11/5628 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/24 ,  G11C16/3459

Abstract: A programming method of a non-volatile memory device including a plurality of memory cells arranged in a plurality of cell strings includes sequentially applying a first pass voltage to unselected word lines of word lines connected to the plurality of memory cells during a first interval and a second pass voltage higher than the first pass voltage to the unselected word lines during a second interval; and applying a discharge voltage lower than a program voltage to a selected word line of the word lines connected to the plurality of memory cells after applying the program voltage to the selected word line in the first interval, and applying the program voltage to the selected word line during the second interval.

公开(公告)号：US09978458B2

公开(公告)日：2018-05-22

申请号：US15383132

申请日：2016-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Yo-han Lee ,  Ji-suk Kim ,  Chang-yeon Yu ,  Jin-young Chun ,  Se-heon Baek ,  Jun-young Ko ,  Seong-ook Jung ,  Ji-su Kim

IPC: G11C11/34 ,  G11C16/34 ,  G11C16/28 ,  G11C16/04 ,  G11C16/08 ,  G11C16/26 ,  G11C11/56

CPC classification number: G11C16/3459 ,  G11C11/5642 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/28

Abstract: A data read operation method of a memory device includes applying a read voltage having a first preparation level and a first target level to a word line of a selected cell in the memory device to read a program state of the selected cell, applying a first read pass voltage having a second preparation level and a second target level to at least one word line of first non-selected cells not adjacent to the selected cell and in the same string as the selected cell, and applying a second read pass voltage having a third target level to a word line of at least one second non-selected cell adjacent to the selected cell.

公开(公告)号：US10803958B2

公开(公告)日：2020-10-13

申请号：US16149327

申请日：2018-10-02

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jin-bae Bang ,  Dae-seok Byeon ,  Ji-su Kim

IPC: G11C16/26 ,  G11C11/56 ,  G11C16/04 ,  H01L27/11582

Abstract: A non-volatile memory device includes a memory cell array including a plurality of memory cells; a page buffer for performing a plurality of read operations and storing results of the read operations, wherein each of the read operations includes at least one sensing operation for selected memory cells from the plurality of memory cells; a multi-sensing manager for determining a number of sensing operations for each of the plurality of read operations and controlling the page buffer to perform the read operations; and a data identifier for identifying a data state of a bit for the selected memory cells based on the results of the read operations, wherein the multi-sensing manager determines the number of sensing operations for at least one read operation from among the read operations to be different from the number of sensing operations for other read operations from among the read operations.

公开(公告)号：US10580486B2

公开(公告)日：2020-03-03

申请号：US16217315

申请日：2018-12-12

Applicant: Samsung Electronics Co., Ltd.

Inventor： Ji-su Kim ,  Dae-seok Byeon

IPC: G11C11/56 ,  G11C16/28 ,  G11C7/14 ,  G11C16/34 ,  G11C16/04 ,  G11C16/30

Abstract: A method of operating a memory device to read data may include determining, in a first read interval associated with a first read operation, a threshold voltage distribution of a most significant program state of a target logical memory page included in a first physical memory page among a plurality of physical memory pages, the first read operation being an operation of reading the target logical memory page of the first physical memory page; transmitting, to a memory controller, a distribution determination result, the distribution determination result being related to the threshold voltage distribution; receiving, from the memory controller, offset levels corrected based on the distribution determination result; and adjusting a read voltage based on offset levels prior to performing a second read operation on a second physical memory page among the plurality of physical memory pages.

公开(公告)号：US08921004B2

公开(公告)日：2014-12-30

申请号：US13720947

申请日：2012-12-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： Myung-jin Lee ,  Joung-won Park ,  Duk-jin Oh ,  Doo-yeon Lee ,  Moon-sung Kang ,  Ji-su Kim ,  Hyeon-jung Cha

IPC: H01M8/10 ,  H01M8/20 ,  H01M8/18

CPC classification number: H01M8/102 ,  H01M8/1023 ,  H01M8/188 ,  H01M8/20 ,  Y02E60/523 ,  Y02E60/528

Abstract: A composition for filling an ion exchange membrane including a first aromatic vinyl monomer having a halogenated alkyl group or a quaternary ammonium salt group, a method of preparing the ion exchange membrane, an ion exchange membrane prepared using the method, and a redox flow battery including the ion exchange membrane.

Abstract translation: 一种用于填充离子交换膜的组合物，其包括具有卤代烷基或季铵盐基团的第一芳族乙烯基单体，制备离子交换膜的方法，使用该方法制备的离子交换膜，以及氧化还原液流电池， 离子交换膜。